Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection

Date

2014-01-01

Author

IŞIK, MEHMET
Delice, S.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

222
views

0
downloads

The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 <= x <= 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The effect of the isomorphic cation substitution (indium for gallium) on critical point energies in TlGaxIn1-xSe2 crystals was established. Moreover, the absorption edge of TlGaxIn1-xSe2 crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of absorption data revealed the presence of both optical indirect and direct transitions. It was found that the energy band gaps decrease with the increase of indium content in the studied crystals.

Subject Keywords

Semiconductors, Optical Properties, Ellipsometry

URI

https://hdl.handle.net/11511/33011

Journal

PHILOSOPHICAL MAGAZINE

DOI

https://doi.org/10.1080/14786435.2014.926038

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements IŞIK, MEHMET; ÇETİN, ŞABAN; Hasanlı, Nızamı; ÖZÇELİK, SÜLEYMAN (2012-05-01) We have carried out the spectroscopic ellipsometry measurements on Ga0.75In0.25Se single crystals in the 1.2-6.0 eV spectral range at room temperature. The optical constants, real and imaginary parts of the dielectric function, refractive index and extinction coefficient, were found as a result of analysis of ellipsometric data. The critical point analysis of the second derivative spectra of the dielectric function revealed four interband transition structures with critical point energy values of 3.19, 3.53...
Interband critical points in TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) IŞIK, MEHMET; Hasanlı, Nızamı (2013-12-25) The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variati...
Optical properties of Cu3In5S9 single crystals by spectroscopic ellipsometry Işık, Mehmet; Nasser, H.; Ahmedova, F.; Guseinov, A.; Hasanlı, Nızamı (2018-01-01) Cu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around ...
Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals IŞIK, MEHMET; Hasanlı, Nızamı; Turan, Raşit (2012-11-01) Spectroscopic ellipsometry measurements on TlGaSe2, TlGaS2 and TlInS2 layered crystals were carried out on the layer-plane (0 0 1) surfaces, which are perpendicular to the optic axis c*, in the 1.2- 6.2 eV spectral range at room temperature. The real and imaginary parts of the pseudodielectric function as well as pseudorefractive index and pseudoextinction coefficient were found as a result of analysis of ellipsometric data. The structures of critical points in the above-band gap energy range have been char...
Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry IŞIK, MEHMET; Hasanlı, Nızamı (2015-07-10) Optical properties of Ga2SeS crystals grown by Bridgman method were investigated by transmission, reflection and ellipsometry measurements. Analysis of the transmission and reflection measurements performed in the wavelength range of 400-1100 nm at room temperature indicated the presence of indirect and direct transitions with 2.28 eV and 2.38 eV band gap energies. Ellipsometry measurements were carried out in the 1.2-6.0 eV spectral region to get information about optical constants, real and imaginary part...

Citation Formats

M. IŞIK, S. Delice, and N. Hasanlı, “Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 <= x <= 1) by spectroscopic ellipsometry, transmission, and reflection,” PHILOSOPHICAL MAGAZINE, pp. 2623–2632, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33011.