X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures

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2005-05-02

Author

Ertaş, Gülay
Atalar, A
Suzer, S

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In x-ray photoemission measurements, differential charging causes the measured binding energy difference between the Si 2p of the oxide and the silicon substrate to vary nonlinearly as a function of the applied external do voltage stress, which controls the low-energy electrons going into and out of the sample. This nonlinear variation is similar to the system where a gold metal strip is connected to the same voltage stress through an external 10 Mohm series resistor and determined again by x-ray photoelectron spectroscopy (XPS). We utilize this functional resemblance to determine the resistance of the 4 nm SiO2 layer on a silicon substrate as 8 Mohm. In addition, by performing time-dependent XPS measurements (achieved by pulsing the voltage stress), we determine the time constant for charging/discharging of the same system as 2.0 s. Using an equivalent circuit, consisting of a gold metal strip connected through a 10 Mohm series resistor and a 56 nF parallel capacitor, and performing time-dependent XPS measurements, we also determine the time constant as 0.50 s in agreement with the expected value (0.56 s). Using this time constant and the resistance (8.0 Mohm), we can determined the capacitance of the 4 nm SiO2 layer as 250 nF in excellent agreement with the calculated value. Hence, by application of external do and pulsed voltage stresses, an x-ray photoelectron spectrometer is turned into a tool for extracting electrical parameters of surface structures in a noncontact fashion. (c) 2005 American Institute of Physics.

Subject Keywords

SIO2/SI System, Hole transport, XPS

URI

https://hdl.handle.net/11511/33247

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.1919396

Collections

Department of Chemistry, Article

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Citation Formats

G. Ertaş, A. Atalar, and S. Suzer, “X-ray photoelectron spectroscopy for resistance-capacitance measurements of surface structures,” APPLIED PHYSICS LETTERS, pp. 0–0, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33247.