Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material

Battal, Enes
Bolat, Sami
OKYAY, Ali Kemal
Akın, Tayfun
ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as -10.4%K-1 near room temperature with the ZnO thin film grown at 120 degrees C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 degrees C grown ZnO has a corner frequency of 2kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 degrees C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications.


Copper nanowire network based transparent thin film heaters
Tigan, Doğancan; Ünalan, Hüsnü Emrah; İmer, Muhsine Bilge; Department of Metallurgical and Materials Engineering (2018)
Metallic nanowire random networks are highly promising as transparent thin film heaters (TTFHs) due to their significant optoelectronic performance and thermal conductivity. Typically silver nanowires (Ag NWs) are utilized as TTFHs but in recent years, copper nanowires (Cu NWs) started to replace them in many applications as an economic alternative. The electrical conductivity of Cu is almost equal to that of Ag and it is much cheaper than Ag at least in bulk form. However, stability of Cu NWs is a lot poor...
Doğru Balbaşı, Çiğdem; Parlak, Mehmet; Department of Physics (2022-5-25)
CdZnTe is an II-VI group semiconductor material with significant properties used in many critical industrial applications, such as photovoltaic devices, photodiodes, photoconductors, room temperature gamma-ray spectroscopy, X-ray imaging, and infrared detectors. In Particular, CdZnTe is a promising material for solar cell application as an absorber layer due to its direct tunable bandgap property, high atomic number with strong absorption, excellent optoelectronic properties, and long-term stability. Howeve...
Investigation of material properties of magnetron sputtered CuAg-In-Se thin films
Güllü, Hasan Hüseyin; Parlak, Mehmet (null; 2016-09-23)
Thin films of copper based chalcopyrite absorber materials are attracting the attention of many researchers because of their favorable optoelectronic properties and good stability makes them suitable for photovoltaic and optoelectronic device applications. These compounds are particularly suitable for making p-n hetero-junctions with the II-VI compounds. Therefore, the utilization of I-III-VI2 group of chalcopyrite semiconductors has been reported in the literature for application in thin film solar cells. ...
Nonlinear compressible finite viscoleasticity of epoxy-based polymers
Dal, Hüsnü; Gromala, P. J.; Han, B. (2019-01-01)
Epoxy-based polymers are widely used in the semiconductor industry as thermal and/or electrical interfaces and as encapsulating material. In the automotive industry, epoxy-based molding compounds (EMCs) are often used to protect not only the single IC packages but also the entire electronic control units (ECUs) (or the power modules). The stress caused by the mismatch of the coefficient of thermal expansion (CTE) between EMC and adjacent materials is one of the major causes for premature failure. In the tem...
Optical and photoelectrical properties of TlInSSe layered single crystals
Güler, Işıkhan; Hasanlı, Nızamı (2018-01-01)
Optical and electrical properties of TlInSSe layered single crystals have been studied by means of transmission, reflection and photoconductivity measurements. Transmission and reflection experiments have been carried out from 540 to 1000 nm at room temperature. Derivative analysis was applied to both transmission and reflection spectra and indirect band gap energy was found as 2.06 eV. Photoconductivity measurements have been performed in the temperature range from 245 to 300 K and in the voltage range fro...
Citation Formats
E. Battal, S. Bolat, M. Y. TANRIKULU, A. K. OKYAY, and T. Akın, “Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 2475–2482, 2014, Accessed: 00, 2020. [Online]. Available: