Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Copper nanowire network based transparent thin film heaters
Download
index.pdf
Date
2018
Author
Tigan, Doğancan
Metadata
Show full item record
Item Usage Stats
286
views
163
downloads
Cite This
Metallic nanowire random networks are highly promising as transparent thin film heaters (TTFHs) due to their significant optoelectronic performance and thermal conductivity. Typically silver nanowires (Ag NWs) are utilized as TTFHs but in recent years, copper nanowires (Cu NWs) started to replace them in many applications as an economic alternative. The electrical conductivity of Cu is almost equal to that of Ag and it is much cheaper than Ag at least in bulk form. However, stability of Cu NWs is a lot poor compared to that of Ag NWs due to ease of oxidation upon air exposure. The problem gets even worse at elevated temperatures considering TTFH applications. Therefore, a protection layer to be deposited onto Cu NW networks is necessary for their large scale utilization in TTFHs. In this study, aluminum oxide (Al2O3) and zinc oxide (ZnO) shells were deposited onto Cu NW networks by atomic layer deposition (ALD) method. Cu NW networks with a sheet resistance of 10 Ω/sq failed only after attaining a temperature of 100 °C due to oxidation. On the other hand, deposition of only 5 nm Al2O3 and ZnO shell layers onto Cu NW networks (10 Ω/sq sheet resistance at 80.8% transmittance and 15 Ω/sq sheet resistance at 84.4% transmittance) increased the maximum attainable temperatures to 153 °C and 139 °C, respectively. This was a clear indication of oxidation protection by the deposition of the shell layer onto Cu NW networks. Moreover, in order to further increase the protection level, the effect of oxide shell thickness was investigated in sacrifice of network transmittance. Attained maximum temperatures were increased up to 309 °C and 237 °C for 50 nm thick Al2O3 and ZnO shell layers on Cu NW networks, respectively. Moreover, prominent heating rates of 14 °C/s and 12 °C/s were obtained from these core shell networks with Al2O3 and ZnO shells, respectively. Finally, an extensive parametric study on NW density, type and thickness of metal oxide shells in comparison to optoelectronic properties of networks and their thermal response is reported. The performance of the networks reported herein lie among the highest achieved for Cu NW TTFHs. In order to demonstrate the feasibility of these networks as TTFHs in a real life application, they were utilized as defrosters.
Subject Keywords
Copper.
,
Nanowires.
,
Thin film devices.
,
Atomic layer deposition.
URI
http://etd.lib.metu.edu.tr/upload/12622526/index.pdf
https://hdl.handle.net/11511/27547
Collections
Graduate School of Natural and Applied Sciences, Thesis
Suggestions
OpenMETU
Core
Transparent thin film heaters based on silver nanowire networks
Ergün, Orçun; Ünalan, Hüsnü Emrah; Department of Metallurgical and Materials Engineering (2015)
Transparent thin film heaters are used in various de-fogging and de-icing applications because of their ability to convert electrical energy to thermal energy while allowing to transmit solar light through a surface. Indium tin oxide (ITO) is the conventional transparent conducting material used in transparent thin film heaters. However, due to scarcity of indium and its increasing prices worldwide, coupled with the inflexibility of ITO, alternative materials are being investigated. Silver nanowire networks...
Investigation Of The Device Properties Of Cztse Thin Films For Solar Cells
Bayraklı, Özge; Güllü, Hasan Hüseyin; Parlak, Mehmet (2016-10-02)
Thin Film Solar Cell has received a considerable attention in the photovoltaic industry. While the efficiency of thin film amorphous silicon is about %14, the efficiency of Cu(In,Ga)Se2 (CIGS) thin film based solar cells ,is very popular in the recent year, reached the value of %20. But CIGS based solar cells have some constraints such as its extensive and large scale production in terms of availability of its constituent elements. On the other hand, Kesterit based solar cells such as Cu2ZnSnSe4 (CZTSe) hav...
Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes
Akgul, Guvenc; Akgul, Funda Aksoy; Ünalan, Hüsnü Emrah; Turan, Raşit (2016-04-12)
In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined w...
Investigation of material properties of magnetron sputtered CuAg-In-Se thin films
Güllü, Hasan Hüseyin; Parlak, Mehmet (null; 2016-09-23)
Thin films of copper based chalcopyrite absorber materials are attracting the attention of many researchers because of their favorable optoelectronic properties and good stability makes them suitable for photovoltaic and optoelectronic device applications. These compounds are particularly suitable for making p-n hetero-junctions with the II-VI compounds. Therefore, the utilization of I-III-VI2 group of chalcopyrite semiconductors has been reported in the literature for application in thin film solar cells. ...
Zinc oxide nanowire networks for macroelectronic devices
Ünalan, Hüsnü Emrah; Hiralal, Pritesh; Dalal, Sharvari; Chu, Daping; Eda, Goki; Teo, K. B. K.; Chhowalla, Manish; Milne, William I.; Amaratunga, Gehan A. J. (AIP Publishing, 2009-04-20)
Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These r...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
D. Tigan, “Copper nanowire network based transparent thin film heaters,” M.S. - Master of Science, Middle East Technical University, 2018.