Skin-like self-assembled monolayers on InAs/GaSb superlattice photodetectors

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Date

2012-09-12

Author

Salihoglu, Omer
Muti, Abdullah
Kutluer, Kutlu
Tansel, Tunay
Turan, Raşit
AYDINLI, ATİLLA

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We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH3[CH2](17)SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77 K under -100 mV bias. The zero bias responsivity and detectivity were 1.04 A W (1) and 2.15 x 10(13) Jones, respectively, at 4 mu m and 77 K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1 mu m.

Subject Keywords

Passivation, Surfaces, Photodiodes, Gaas, Alkanethiol

URI

https://hdl.handle.net/11511/33271

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS

DOI

https://doi.org/10.1088/0022-3727/45/36/365102

Collections

Department of Physics, Article

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Citation Formats

O. Salihoglu, A. Muti, K. Kutluer, T. Tansel, R. Turan, and A. AYDINLI, “Skin-like self-assembled monolayers on InAs/GaSb superlattice photodetectors,” JOURNAL OF PHYSICS D-APPLIED PHYSICS, pp. 0–0, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33271.