XPS analysis with external bias: a simple method for probing differential charging

Download
2004-07-01
The XPS spectra of thermally grown oxide layers on Si, Al, W and Hf substrates have been recorded while the samples were subjected to external d.c. voltage bias. The bias induces additional shifts in the measured binding energy differences between the XPS peaks of the oxide and that of the metal substrate in Si and Al (as probed both in the 2p and the KLL Auger regions), but not in W and Hf (as probed in the 4f region). These bias induced shifts are attributed to differential charging between the oxide layer and the substrate, which in turn is postulated to be related to the capacitance and inversely to the dielectric constant of the oxide layer. Accordingly, silicon dioxide with the smallest dielectric constant undergoes the largest differential charging, aluminium oxide is in the middle and no appreciable charging can be induced in the high-k tungsten and hafnium oxides, all of which are similar to6 nm thick. Copyright (C) 2004 John Wiley Sons, Ltd.
SURFACE AND INTERFACE ANALYSIS

Suggestions

Ion beam synthesized lummescent Si nanocrystals embedded in SO2 films and the role of damage on nucleation during annealing
Mayandi, J.; Finstad, T. G.; Foss, S.; Thogersen, A.; Serincan, U.; Turan, Raşit (Elsevier BV, 2007-08-05)
Si nanocrystals in thermal oxide films (similar to 250 nm) were fabricated by 100 keV Si ion implantation followed by high temperature annealing. Two different doses were compared after annealing at 1050 degrees C for 2 h. A sample implanted with a dose of 1 x 10(17) cm(-2) shows a broad photo luminescence peak centered around 880 nm after annealing. A dose of 5 x 10(16) cm(-2) yields a considerable blue shift of about 100 nm relative to the higher dose as well as a reduction in intensity. Transmission elec...
Capacitance analyses of hydrogenated nanocrystalline silicon based thin film transistor
ANUTGAN, TAMİLA; ANUTGAN, MUSTAFA; Atilgan, Ismail; Katircioglu, Bayram (Elsevier BV, 2011-03-31)
The capacitance-voltage (C-V) measurements within 10(6)-10(-2) Hz frequency range were performed on the hydrogenated nanocrystalline silicon (nc-Si:H) bottom-gate thin film transistor (TFT) and metal-insulator-amorphous silicon (MIAS) structure, mechanically isolated from the same TFT. It was found that the conducting thin layer in nc-Si:H film expands the effective capacitor area beyond the electrode in the TFT structure, which complicates its C-V curves. Considering the TFT capacitance-frequency (C-F) cur...
Atomic and electronic structure of Sr/Si(001)-(2 x 2)
Cakmak, M.; Mete, E.; Ellialtıoğlu, Süleyman Şinasi (Elsevier BV, 2006-09-15)
The adsorption of Sr on the Si(001) surface with the semiantiphase dimer (2 x 2) reconstruction is studied, based upon the ab initio pseudopotential calculations. It is calculated that the sermantiphase dimer (2 x 2) reconstruction (2 dimers per unit cell) is more favorable than the (2 x 1) phase (I dimer per unit cell) by an energy of about 0.24 eV/dimer. Considering the energetically more stable reconstruction, we have assumed four possible locations for 1/4 monolayer (ML) Sr adsorption on this surface: (...
Plasma-Induced, Solid-State Polymerization of N-Isopropylacrylamide
Unver, Alper; Akovali, Guneri (Wiley, 2010-03-15)
The radio-frequency plasma-initiated polymerization of N-isopropylacrylamide (NIPAM) in the solid state was performed. The isolated linear polymer was characterized by C-13-NMR, H-1-NMR, and Fourier transform infrared spectroscopy, and the effects of selected operational plasma parameters (discharge power and time) on the conversion rates were studied. Reversible transitions at the volume-phase-transition temperatures of the swelled poly(N-isopropylacrylamide) hydrogels were investigated by differential sca...
Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells
Koekbudak, Gamze; Kececi, Ahmet E.; Nasser, Hisham; Turan, Raşit (American Vacuum Society, 2021-01-01)
In this study, we report on the passivation quality of atomic layer deposition grown ultra-thin Al2O3 and Al2O3 capped with plasma-enhanced chemical vapor deposition deposited SiNx on Cz p-type wafers for the rear side of a passivated emitter and rear cell (PERC). Different activation recipes using N-2, forming gas (FG), and two-step annealing for different durations are investigated before SiNx deposition. The effect of different Al2O3 thicknesses and corresponding activation processes on the Al2O3/SiNx pa...
Citation Formats
G. Ertaş, “XPS analysis with external bias: a simple method for probing differential charging,” SURFACE AND INTERFACE ANALYSIS, pp. 619–623, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34300.