Donor-acceptor pair recombination in AgIn5S8 single crystals

Download

index.pdf

Date

1999-03-15

Author

Hasanlı, Nızamı
Aydinli, A
Gurlu, O
Yilmaz, I

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

163
views

0
downloads

Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics.

Subject Keywords

Photoluminescence, Dependence, Band

URI

https://hdl.handle.net/11511/34681

Journal

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.369660

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Donor-acceptor pair recombination in Tl2InGaS4 layered crystals Goksen, K; Hasanlı, Nızamı; Ozkan, H; Aydinli, A (2005-08-01) Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm(-2). We observed a total of three PL, bands, one centered at 542 nm (2.286 eV, A-band), one at 607 nm (2.041 eV, B-band), and one at 707 nm (1.754 eV, C-band), at various excitation intensities. The A- and the B-bands were determined to be due to radiative transitions from moderately deep donor levels located at 0.189 and 0.443 eV below ...
Radiative Donor-Acceptor Pair Recombination in Tl2Ga2Se3S Layered Single Crystals Hasanlı, Nızamı (2013-07-01) The emission band spectra of Tl2Ga2Se3S layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T = 10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission ...
Radiative donor-acceptor pair recombination in TlInS2 single crystals Aydinli, A; Hasanlı, Nızamı; Yilmaz, I; Serpenguzel, A (IOP Publishing, 1999-07-01) Photoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) and 816 nm (1.52 eV, B band) at T = 11.5 K and an excitation intensity of 7.24 FV cm(-2). A detailed study of the A band was carried out as a function of temperature and excitation laser intensity. A red shift of the A band position was observed for both increasing temperature and decreasin...
Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals Hasanlı, Nızamı; Yuksek, NS (2002-12-16) Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 46.0-800 nm and in, the temperature range 10-65 K. We observed one wide PL band-centred at 584 nm (2.122 eV) at T = 10 K and an excitation intensity of 7.5 W cm(-2). We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm(-2). The red shift of this band with increasing temperature and blue shift with increasing laser excitation inte...
Photoelectrical properties of TlGaSe2 single crystals Özdemir, Salahattin (2014-07-01) The spectral distribution of photocurrent (PC) of TlGaSe2 single crystals in the range of wavelengths between 500 nm and 700 nm possesses a single maximum at 2.04 eV corresponds to the direct energy band gap of this crystal. The PC is enhanced dramatically by pre-illuminations at low temperatures with band gap light. The temperature dependence of PC of the sample investigated in the temperature range from 80 K to 300 K at constant heating rate shows that the overlapping peaks in the PC spectrum are direct r...

Citation Formats

N. Hasanlı, A. Aydinli, O. Gurlu, and I. Yilmaz, “Donor-acceptor pair recombination in AgIn5S8 single crystals,” JOURNAL OF APPLIED PHYSICS, pp. 3198–3201, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34681.