Radiative donor-acceptor pair recombination in TlInS2 single crystals

Aydinli, A
Hasanlı, Nızamı
Yilmaz, I
Serpenguzel, A
Photoluminescence (PL) spectra of TlInS2 layered single crystals were investigated in the 500-860 nm wavelength region and in the 11.5-100 K temperature range. We observed two PL bands centred at 515 nm (2.41 eV, A band) and 816 nm (1.52 eV, B band) at T = 11.5 K and an excitation intensity of 7.24 FV cm(-2). A detailed study of the A band was carried out as a function of temperature and excitation laser intensity. A red shift of the A band position was observed for both increasing temperature and decreasing excitation laser intensity in the range from 0.12 to 7.24 W cm(-2). Analysis of the data indicates that the A band is due to radiative transitions from the moderately deep donor level located at 0.25 eV below the bottom of the conduction band to the shallow acceptor level located at 0.02 eV above the top of the valence band. An energy-level diagram for radiative donor-acceptor pair transitions in TlInS2 layered single crystals is proposed.


Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı; KORKMAZ ÖZKAN, FİLİZ (Elsevier BV, 2013-07-15)
The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.
Optical constants of Tl4Ga3InSe8 layered single crystals
Goksen, K.; Hasanlı, Nızamı (Elsevier BV, 2007-11-15)
The optical properties of Tl(4)Ga(3)lnSe(8) layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500-1100 run. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature i...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01)
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
BURLAKOV, VM; RYABOV, AP; YAKHEEV, MP; VINOGRADOV, EA; MELNIK, NN; Hasanlı, Nızamı (Wiley, 1989-06-01)
Low‐frequency Raman spectra of a TlInS2 single crystal in the vicinity of a ferroelectric phase transition are reported. In the ferroelectric phase a soft mode interacting with some rigid modes is observed. The temperature dependence of the soft mode frequency is found to be proportional to (Tc – T)1/2. An unusual behaviour of the rigid mode (ω = 20 cm−1) is observed. This fact is interpreted in terms of inherent lattice defects which cause nonhomogeneous broadening.
Thermally stimulated currents in layered semiconductor Tl4In3GaS8
Hasanlı, Nızamı; Mogaddam, N. A. P. (IOP Publishing, 2006-09-01)
We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found...
Citation Formats
A. Aydinli, N. Hasanlı, I. Yilmaz, and A. Serpenguzel, “Radiative donor-acceptor pair recombination in TlInS2 single crystals,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 599–603, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40569.