Donor-acceptor pair recombination in Tl2InGaS4 layered crystals

Date

2005-08-01

Author

Goksen, K
Hasanlı, Nızamı
Ozkan, H
Aydinli, A

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

123
views

0
downloads

Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm(-2). We observed a total of three PL, bands, one centered at 542 nm (2.286 eV, A-band), one at 607 nm (2.041 eV, B-band), and one at 707 nm (1.754 eV, C-band), at various excitation intensities. The A- and the B-bands were determined to be due to radiative transitions from moderately deep donor levels located at 0.189 and 0.443 eV below the bottom of the conduction band to the shallow acceptor levels at 0.025 and 0.016 eV above the top of the valence band, respectively. The blue shift of the C-band peak energy and the quenching of the PL with increasing temperature are explained within the configuration coordinate model. The observation in the PL spectra of different emission bands in the sequence of 13, C- and A-bands at low, moderate, and high excitation laser intensities, respectively, axe attributed to the shift of the quasi-Fermi level with increasing excitation intensity..

Subject Keywords

Photoluminescence, Photoluminescence, Semiconductors, Layered crystals, Defect levels, Tl2InGaS4

URI

https://hdl.handle.net/11511/55020

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31) The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal Hasanlı, Nızamı; Aydinli, A; Baten, SMA (2000-02-01) The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature, 0.2-15.2 W cm(-2) excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomoge...
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence Hasanlı, Nızamı (2015-10-01) Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Donor-acceptor pair recombination in AgIn5S8 single crystals Hasanlı, Nızamı; Aydinli, A; Gurlu, O; Yilmaz, I (1999-03-15) Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupy...
Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals Isik, M.; Guler, I.; Hasanlı, Nızamı (2013-01-01) Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction ban...

Citation Formats

K. Goksen, N. Hasanlı, H. Ozkan, and A. Aydinli, “Donor-acceptor pair recombination in Tl2InGaS4 layered crystals,” JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 267–271, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/55020.