Growth, electrical and structural characterization of beta-GaSe thin films

Parlak, Mehmet
Ercelebi, C
GaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emission of charged carriers and the variable range hopping above and below 180 K, respectively. Space charge limited current (SCLC) studies have also been performed on these films through the current-voltage measurements at different temperatures and a dominant hole trap at 0.233 eV from the top of the valance band with a trap density of similar to1.6 x 10(11) cm(-3) is identified. (C) 2003 Kluwer Academic Publishers.


KOC, R; ANDERSON, HU (Springer Science and Business Media LLC, 1992-10-15)
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Delice, S.; IŞIK, MEHMET; Hasanlı, Nızamı (Springer Science and Business Media LLC, 2014-03-01)
Thermoluminescence (TL) measurements in Tl2InGaSe4-layered single crystals have been carried out in the temperature range of 10-200 K at various heating rates (0.2-1.0 K s(-1)) to get information about the characteristics of traps. Two TL overlapping glow peaks related to defect levels have been clearly observed. Thermal cleaning procedure was applied to the glow curves to separate overlapped peaks. Initial rise, peak shape, and heating rate methods were used to calculate the activation energies of the reve...
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Formation of hexagonal boron nitride by carbothermic reduction of boric oxide under nitrogen atmosphere at 1500 degrees C was investigated. Experiments were performed for durations in the range of 15 min to 3 h. Reaction products were subjected to powder X-ray diffraction analysis, chemical analysis and were examined by scanning electron microscope. Formation of hexagonal boron nitride was found to be complete in 3 h with most forming in the initial 2 h. Boron carbide was found to exist in the reaction prod...
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Bayhan, M; Hashemi, T; Brinkman, AW (Springer Science and Business Media LLC, 1997-12-15)
Solid state reaction at elevated temperatures and the sintering behaviour of zinc chromite formed by zinc oxide and chromite oxide were investigated. Crystalline structure, surface and fractured morphologies and humidity-sensitivity characteristics of ZnCr2O4-K2CrO4-CuO were studied. The fired ceramic body, which proved to be mainly constructed from ZnCr2O4 spinel grains, was porous. The humidity characteristics of the sensor showed that the resistance decreased as a logarithmic function with an increase in...
Citation Formats
M. Parlak and C. Ercelebi, “Growth, electrical and structural characterization of beta-GaSe thin films,” JOURNAL OF MATERIALS SCIENCE, pp. 1507–1511, 2003, Accessed: 00, 2020. [Online]. Available: