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Growth, electrical and structural characterization of beta-GaSe thin films
Date
2003-04-01
Author
Parlak, Mehmet
QASRAWİ, ATEF
Ercelebi, C
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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GaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emission of charged carriers and the variable range hopping above and below 180 K, respectively. Space charge limited current (SCLC) studies have also been performed on these films through the current-voltage measurements at different temperatures and a dominant hole trap at 0.233 eV from the top of the valance band with a trap density of similar to1.6 x 10(11) cm(-3) is identified. (C) 2003 Kluwer Academic Publishers.
Subject Keywords
Mechanical Engineering
,
General Materials Science
,
Mechanics of Materials
URI
https://hdl.handle.net/11511/34700
Journal
JOURNAL OF MATERIALS SCIENCE
DOI
https://doi.org/10.1023/a:1022924615383
Collections
Department of Physics, Article