Growth, electrical and structural characterization of beta-GaSe thin films

Date

2003-04-01

Author

Parlak, Mehmet
Ercelebi, C

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GaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emission of charged carriers and the variable range hopping above and below 180 K, respectively. Space charge limited current (SCLC) studies have also been performed on these films through the current-voltage measurements at different temperatures and a dominant hole trap at 0.233 eV from the top of the valance band with a trap density of similar to1.6 x 10(11) cm(-3) is identified. (C) 2003 Kluwer Academic Publishers.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials

URI

https://hdl.handle.net/11511/34700

Journal

JOURNAL OF MATERIALS SCIENCE

DOI

https://doi.org/10.1023/a:1022924615383

Collections

Department of Physics, Article

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Citation Formats

M. Parlak and C. Ercelebi, “Growth, electrical and structural characterization of beta-GaSe thin films,” JOURNAL OF MATERIALS SCIENCE, pp. 1507–1511, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34700.