Trapping centers and their distribution in Tl2InGaSe4 single crystals by thermally stimulated luminescence

Delice, S.
Hasanlı, Nızamı
Thermoluminescence (TL) measurements in Tl2InGaSe4-layered single crystals have been carried out in the temperature range of 10-200 K at various heating rates (0.2-1.0 K s(-1)) to get information about the characteristics of traps. Two TL overlapping glow peaks related to defect levels have been clearly observed. Thermal cleaning procedure was applied to the glow curves to separate overlapped peaks. Initial rise, peak shape, and heating rate methods were used to calculate the activation energies of the revealed traps. The energy values of 5 and 28 meV were evaluated for the peaks observed at low and high temperatures, respectively. Moreover, heating rate dependence and traps distribution analysis were also investigated on the curve obtained after thermal cleaning. The activation energies of the distributed trapping centers were found to be increasing from 29 to 151 meV with increasing the illumination temperature from 42 to 80 K.


KOC, R; ANDERSON, HU (Springer Science and Business Media LLC, 1992-10-15)
Electrical conductivity and Seebeck coefficients of (La, Ca) (Cr, Co) O3 were measured as a function of temperature. The electrical conductivity as measured in air from 100 to 1100-degrees-C increased with increasing Co and Ca content. The Seebeck coefficients were positive, indicating p-type conductivity. The substitution of Co for Cr significantly decreased the Seebeck coefficients, indicating that the substitution resulted in an increase in site occupancy, associated with the Co. The additional Ca substi...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02)
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Photocurrent analysis of AgIn5S8 crystal
Bucurgat, Mahmut; Ozdemir, Selahattin; Firat, Tezer (Springer Science and Business Media LLC, 2016-10-01)
The photocurrent (PC) spectrum of AgIn5S8 crystal consists of a single peak, which provides to determine the bandgap energy by applying the Moss rule. The temperature dependence of the bandgap energy was also calculated. The PC dramatically increased by pre-illumination with light having wavelength corresponding to the bandgap of AgIn5S8. The temperature-dependent PC of the sample was measured at different temperatures from 80 to 300 K and the PC spectrum consisted a single broad peak. Thermal quenching of ...
Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2009-06-01)
Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl2Ga2Se3S layered single crystals in the temperature range of 10-260K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirme...
The defect state of Yb-doped ZnO nanoparticles using thermoluminescence study
Hasanlı, Nızamı (Elsevier BV, 2019-09-01)
Shallow trapping centers in Yb-doped ZnO nanoparticles were determined using thermoluminescence (TL) measurements applied in the 10-300 K temperature region. Undoped and Yb-doped ZnO nanoparticles were synthesized by sol-gel method. TL glow curve of undoped nano-particles presented three peaks around 56, 108 and 150 K whereas one additional peak around 83 K was observed in the TL curve of Yb-doped ZnO nano-particles. The increase of Yb concentration in the nanoparticles increased the TL intensity of this ad...
Citation Formats
S. Delice, M. IŞIK, and N. Hasanlı, “Trapping centers and their distribution in Tl2InGaSe4 single crystals by thermally stimulated luminescence,” JOURNAL OF MATERIALS SCIENCE, pp. 2542–2547, 2014, Accessed: 00, 2020. [Online]. Available: