Thin-film transistors based on poly, (3,3 '''-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability

Date

2011-03-07

Author

Vieira, Sara M. C.
Hsieh, Gen-Wen
Ünalan, Hüsnü Emrah
Dag, Sefa
Amaratunga, Gehan A. J.
Milne, William I.

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The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly (3,3'''-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2 x 10(-4) cm(2)/V s. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3 x 10(-5) cm(2)/V s. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required. (C) 2011 American Institute of Physics. [doi:10.1063/1.3560982]

Subject Keywords

Physics and Astronomy (miscellaneous)

URI

https://hdl.handle.net/11511/36641

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3560982

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

S. M. C. Vieira, G.-W. Hsieh, H. E. Ünalan, S. Dag, G. A. J. Amaratunga, and W. I. Milne, “Thin-film transistors based on poly, (3,3 ‴-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability,” APPLIED PHYSICS LETTERS, pp. 0–0, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36641.