IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS

Date

1990-01-01

Author

ILAIWI, KF
Tomak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

142
views

0
downloads

The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.

Subject Keywords

Shallow donors, Semiconductors, Photoionization

URI

https://hdl.handle.net/11511/34918

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/0022-3697(90)90120-5

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS ELSAID, M; Tomak, Mehmet (1991-01-01) The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.
PHOTOIONIZATION OF IMPURITIES IN QUANTUM-WELLS ELSAID, M; Tomak, Mehmet (1992-06-01) The dependence of photoionization cross-section on photon energy is calculated for shallow donors in quantum wells. The resulting spectra is completely different for light polarized along and perpendicular to the growth direction.
Pseudorapidity dependence of long-range two-particle correlations in pPb collisions at root sNN=5.02 TeV Khachatryan, V.; et. al. (2017-07-01) Two-particle correlations in pPb collisions at a nucleon-nucleon center-of-mass energy of 5.02 TeV are studied as a function of the pseudorapidity separation (Delta eta) of the particle pair at small relative azimuthal angle (|Delta phi| < pi/3). The correlations are decomposed into a jet component that dominates the short-range correlations (|Delta eta| < 1), and a component that persists at large Delta eta and may originate from collective behavior of the produced system. The events are classified in term...
Impurity-bound electron in quantum well-heterostructure-type systems Özdinçer, Uğur; Erçelebi, Atilla (Elsevier BV, 1988-1) The ground-state binding energy of a hydrogenic impurity is retrieved as a function of the effective dimensionality in a quantum well confinement. The geometry we use is a rectangular box, the dimensions of which can be tuned so as to yield a unified description interpolating between the bulk, the quasi-two- and one-dimensional limits as well as the quantum well box case.
Eigensolution, expectation values and thermodynamic properties of the screened Kratzer potential Ikot, A. N.; Okorie, U. S.; Sever, Ramazan; Rampho, G. J. (Springer Science and Business Media LLC, 2019-08-12) Within the framework of non-relativistic quantum mechanics via the Nikiforov-Uvarov (NU) method, we obtained the energy eigenvalues and the corresponding normalized eigenfunctions of a newly proposed screened Kratzer potential for lithium hydride (LiH) and hydrogen chloride (HCl) diatomic molecules. With the help of the Hellman-Feynman theorem, the expressions for the expectation values of the square of inverse of position, r(-2), inverse of position, r(-1), kinetic energy, T, and square of momentum, p(2), ...

Citation Formats

K. ILAIWI and M. Tomak, “IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 361–365, 1990, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34918.