IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS

Date

1990-01-01

Author

ILAIWI, KF
Tomak, Mehmet

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The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.

Subject Keywords

Shallow donors, Semiconductors, Photoionization

URI

https://hdl.handle.net/11511/34918

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/0022-3697(90)90120-5

Collections

Department of Physics, Article

Citation Formats

K. ILAIWI and M. Tomak, “IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol. 51, no. 4, pp. 361–365, 1990, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34918.