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IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS
Date
1990-01-01
Author
ILAIWI, KF
Tomak, Mehmet
Metadata
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.
Subject Keywords
Shallow donors
,
Semiconductors
,
Photoionization
URI
https://hdl.handle.net/11511/34918
Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
DOI
https://doi.org/10.1016/0022-3697(90)90120-5
Collections
Department of Physics, Article
