IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS

1990-01-01
ILAIWI, KF
Tomak, Mehmet
The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.

Citation Formats
K. ILAIWI and M. Tomak, “IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol. 51, no. 4, pp. 361–365, 1990, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34918.