PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS

Date

1991-01-01

Author

ELSAID, M
Tomak, Mehmet

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The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in infinite-barrier GaAs/Ga(1-x)Al(x)As quantum well as a function of well width. The effect of a magnetic field is also considered.

Subject Keywords

Quantum wells, Semiconductors, Shallow impurities, Photoionization, Magnetic field

URI

https://hdl.handle.net/11511/47615

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/0022-3697(91)90154-r

Collections

Department of Physics, Article

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PHOTOIONIZATION OF IMPURITIES IN QUANTUM-WELLS ELSAID, M; Tomak, Mehmet (1992-06-01) The dependence of photoionization cross-section on photon energy is calculated for shallow donors in quantum wells. The resulting spectra is completely different for light polarized along and perpendicular to the growth direction.
IMPURITY PHOTOIONIZATION IN SEMICONDUCTORS ILAIWI, KF; Tomak, Mehmet (1990-01-01) The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.
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Citation Formats

M. ELSAID and M. Tomak, “PHOTOIONIZATION OF IMPURITIES IN INFINITE-BARRIER QUANTUM-WELLS,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 603–606, 1991, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47615.