Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
A New Temperature-Tolerant RF MEMS Switch Structure Design and Fabrication for Ka-Band Applications
Date
2016-02-01
Author
Demirel, Kaan
Yazgan, Erdem
Demir, Şimşek
Akın, Tayfun
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
197
views
0
downloads
Cite This
In this paper, the design and fabrication of a new radio frequency (RF) microelectromechanical system (MEMS) switch structure is presented. This RF MEMS switch is developed to get the minimum permanent deformation on the microbridge after 200 degrees C thermal treatment. The residual stress-based buckling on the MEMS bridge is simulated for 5-40-MPa/mu m stress gradient (Delta sigma) with 5-MPa/mu m steps. The temperature-dependent extension and deformation on the MEMS bridge are modeled up to 270 degrees C. The temperature-dependent permanent deformation on the MEMS bridge is reduced by optimizing the dimensions of the bridge. The electromechanical and electromagnetic simulations are carried out to find the actuation voltage and the RF performance at Ka-band. The actuation voltage is measured as 22 and 25 V before and after 200 degrees C thermal treatment for 2-mu m air gap (g(0)). The RF performance of the switch is measured before and after 200 degrees C thermal treatment to observe the temperature effect on the MEMS bridge. The persistent insertion loss (<0.35 dB) and the isolation (<-20 dB at 28-40 GHz) are measured before and after thermal treatment. The RF MEMS switch is fabricated on quartz wafer using an in-house surface micromachining process with an amorphous silicon sacrificial layer structure. [2015-0134]
Subject Keywords
Amorphous silicon (a-Si)
,
Buckling
,
RF microelectromechanical systems (RF MEMS)
,
Thermal treatment
,
Sacrificial layer
,
Stress
,
Temperature
URI
https://hdl.handle.net/11511/34973
Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
DOI
https://doi.org/10.1109/jmems.2015.2485659
Collections
Department of Electrical and Electronics Engineering, Article
Suggestions
OpenMETU
Core
Cantilever type radio frequency microelectromechanical systems shunt capacitive switch design and fabrication
Demirel, Kaan; Yazgan, Erdem; Demir, Şimşek; Akın, Tayfun (SPIE-Intl Soc Optical Eng, 2015-9-21)
A new cantilever type radio frequency microelectromechanical systems (RF MEMS) shunt capacitive switch design and fabrication is presented. The mechanical, electromechanical, and electromagnetic designs are carried out to get <40 V actuation voltage, high isolation, and low insertion loss for 24 and 35 GHz and the fabrication is carried out for 24 GHz RF MEMS switch. The fabricated switch shows lower than 0.35 dB insertion loss up to 40 GHz and greater than 20 dB isolation at 22 to 29 GHz frequency band. An...
A fabrication process based on structural layer formation using Au-Au thermocompression bonding for RF MEMS capacitive switches and their performance
Cetintepe, Cagri; Topalli, Ebru Sagiroglu; Demir, Şimşek; Aydın Çivi, Hatice Özlem; Akın, Tayfun (2014-10-01)
This paper presents a radio frequency micro-electro-mechanical-systems (RF MEMS) fabrication process based on a stacked structural layer and Au-Au thermocompression bonding, and reports on the performance of a sample RF MEMS switch design implemented with this process. The structural layer consists of 0.1 mu m SiO2/0.2 mu m SixNy/1 mu m Cr-Au layers with a tensile stress less than 50 MPa deposited on a silicon handle wafer. The stacked layer is bonded to a base wafer where the transmission lines and the iso...
A reconfigurable RF MEMS triple stub impedance matching network
Unlu, M.; Topalli, K.; Atasoy, H.I.; Temocin, E.U.; Istanbulluoglu, I.; Bayraktar, O.; Demir, Şimşek; Civi, O.A.; Koç, Seyit Sencer; Akın, Tayfun (2006-09-12)
This paper presents a reconligurable triple stub impedance matching network using RF MEMS technology centered at 10GHz. The device is capable of covering impedances on the whole Smith Chart. The device structure consists of three variable length stubs which are designed as distributed MEMS transmission lines and two lambda(g)/8 length CPW transmission fines connecting the stubs. The variable length stubs are implemented with 12 MEMS switches over CPW lines and CPW lines connecting the switches. lambda(g)/8 ...
Design of an X-band 3-bit RF MEMS constant phase shifter
Kuzubaşlı, Ahmet; Akın, Tayfun; Demir, Şimşek; Department of Electrical and Electronics Engineering (2016)
This thesis presents a 3-bit 180° constant phase shifter design implementing Co-Planar Waveguide (CPW) and RF MEMS variable capacitors with ±1.8% accuracy at 10 GHz and ±5.8% maximum peak error between 9-11 GHz. The phase shifter with minimum phase errors is determined by considering exemplary circuit simulations of different phase shifter types designed with a novel in-house RF MEMS fabrication process [1] parameters. Due to its wide-band characteristics and CPW compatibility, the selected topology is the ...
A Bulk-Micromachined Three-Axis Capacitive MEMS Accelerometer on a Single Die
TEZ, SERDAR; Aykutlu, Ulas; Torunbalci, Mustafa Mert; Akın, Tayfun (2015-10-01)
This paper presents a high-performance three-axis capacitive microelectromechanical system (MEMS) accelerometer implemented by fabricating individual lateral and vertical differential accelerometers in the same die. The fabrication process is based on the formation of a glass-silicon-glass multi-stack. First, a 35-mu m thick < 111 > silicon structural layer of an Silicon-On-Insulator (SOI) wafer is patterned with deep reactive ion etching (DRIE) and attached on a base glass substrate with anodic bonding, wh...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
K. Demirel, E. Yazgan, Ş. Demir, and T. Akın, “A New Temperature-Tolerant RF MEMS Switch Structure Design and Fabrication for Ka-Band Applications,”
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
, pp. 60–68, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34973.