Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals

Date

2013-07-15

Author

IŞIK, MEHMET
Hasanlı, Nızamı

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Dark electrical resistivity, space-charge-limited (SCL) current and photoconductivity measurements were carried out on Ga0.75In0.25Se single crystals. Analysis of the dark resistivity measurements revealed the presence of one level with activation energy of 0.10 eV. Current voltage characteristics showed that both ohmic and SCL characters exhibit in 180-300 K range. Analysis of the experimental data in the SCL region resulted with a trap level at 0.11 eV above the valence band. Photoconductivity measurements were performed at different light intensities in the temperature range of 150-300 K. Behavior of the recombination mechanism in the crystal was brought out as sublinear recombination from the dependence of photocurrent on illumination intensity. Moreover, obtained activation energies were compared with the results of other experimental techniques applied to Ga0.75In0.25Se crystals in literature.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/35045

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2013.04.015

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK and N. Hasanlı, “Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals,” PHYSICA B-CONDENSED MATTER, pp. 53–56, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35045.