Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals

Date

2013-07-15

Author

IŞIK, MEHMET
Hasanlı, Nızamı
KORKMAZ ÖZKAN, FİLİZ

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The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/35868

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2013.03.046

Collections

Department of Physics, Article

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Citation Formats

M. IŞIK, N. Hasanlı, and F. KORKMAZ ÖZKAN, “Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals,” PHYSICA B-CONDENSED MATTER, pp. 50–52, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35868.