Anharmonic line shift and linewidth of the Raman modes in GaS0.75Se0.25 layered crystals

Date

2002-11-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

142
views

0
downloads

The frequencies and linewidths of five Raman-active modes in a GaS0.75Se0.25 layered crystal have been measured in the 10-300 K temperature range and in the 10-380 cm(-1) frequency region. We observed softening and broadening of the optical phonon lines with increasing temperature. The analysis of the experimental data showed that the temperature dependencies of frequencies and linewidths are well described by considering the contributions from thermal expansion and lattice anharmonicity. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/46033

Journal

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

DOI

https://doi.org/10.1002/1521-3951(200211)234:2<665::aid-pssb665>3.0.co;2-2

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Optoelectronic and electrical properties of TlGaS2 single crystal Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2005-10-01) The optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static r...
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Thermally stimulated currents in layered Ga4SeS3 semiconductor Aytekin, S; Yuksek, NS; Goktepe, M; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-10-01) Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calc...
Photoelectronic and electrical properties of InS crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01) To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...

Citation Formats

N. Hasanlı, “Anharmonic line shift and linewidth of the Raman modes in GaS0.75Se0.25 layered crystals,” PHYSICA STATUS SOLIDI B-BASIC RESEARCH, pp. 665–673, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46033.