Characterization of Ag/TlInSe2/Ag structure

Hasanlı, Nızamı
In this work, the current voltage characteristics of Ag/TlInSe2/Ag and In/TlInSe2/In structures, the incident light intensity and time dependencies of photocurrent as well as the response time-illumination intensity dependence of Ag/TlInSe2/Ag structures have been studied. For bias voltages larger than 1200. and 4.0 V, the current injection was found to be space charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, respectively. While indium-contacted samples show S-shaped I-V dependence above bias voltage of 10.0V, silver contacted samples does not show this behavior even at 200.0 V. For the Ag/TlInSe2/Ag structure, photocurrent was observed to exhibit stable values in a very short period of time. The device response time decreases with increasing illumination intensity, it exhibits a value of 0.13 s at incident light intensity of 53.6 mW cm(-2). The decrement in response time with increasing illumination intensity is associated with an increment in photocurrent at the same ratio. The ohmic behavior up to high voltages (120 V), the fast response time and the large spatial photocurrent make the Ag/TlInSe2/Ag structure promising IR detectors. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


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QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2009-11-01)
In this work, the transport and recombination mechanisms as well as the average hole-relaxation time in TlGaTe2 have been investigated by means of temperature-dependent dark electrical conductivity, photoexcitation intensity-dependent photoconductivity, and Hall effect measurements, respectively. The experimental data analysis revealed the existence of a critical temperature of 150 K. At this temperature, the transport mechanism is disturbed. The dark conductivity data analysis allowed the determination of ...
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In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter...
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Uysal, I.; Severcan, F.; Evis, Zafer (Elsevier BV, 2013-09-01)
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Yurtseven, Hasan Hamit (Informa UK Limited, 2008-01-01)
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Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01)
The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Characterization of Ag/TlInSe2/Ag structure,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 1688–1692, 2011, Accessed: 00, 2020. [Online]. Available: