Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements

Date

2008-07-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

196
views

0
downloads

In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter analysis allowed the determination of electron effective mass as 0.38m(0), hole effective mass as 0.42m(0), donor impurity energy level as 0.45 eV, acceptor-donor concentration ratio (N-a/N-d) as 0.97 and a donor-acceptor concentration difference as N-d - N-a = 1.5 x 10(11) cm(-3). The Hall mobility of Ga4Se3S is found to increase with decreasing temperature following a power law of slope of similar to(-6.3). The abnormal behavior of mobility was attributed to the domination of phonon scattering and/or crystals anisotropy. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics

URI

https://hdl.handle.net/11511/41946

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.200824105

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Hole-polar phonon interaction scattering mobility in chain structured TlSe0.75S0.25 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2009-07-01) In this study, the electrical resistivity, charge carriers density and Hall mobility of chain structured TlSe0.75S0.25 crystal have been measured and analyzed to establish the dominant scattering mechanism in crystal. The data analyses have shown that this crystal exhibits an extrinsic p-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of three energy levels located at 280 meV, 68 meV and 48 meV. The temperature dependence of carrier density was analyze...
Characterization of Ag/TlInSe2/Ag structure QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2011-07-01) In this work, the current voltage characteristics of Ag/TlInSe2/Ag and In/TlInSe2/In structures, the incident light intensity and time dependencies of photocurrent as well as the response time-illumination intensity dependence of Ag/TlInSe2/Ag structures have been studied. For bias voltages larger than 1200. and 4.0 V, the current injection was found to be space charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, res...
Transport and recombination kinetics in TlGaTe2 crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Wiley, 2009-11-01) In this work, the transport and recombination mechanisms as well as the average hole-relaxation time in TlGaTe2 have been investigated by means of temperature-dependent dark electrical conductivity, photoexcitation intensity-dependent photoconductivity, and Hall effect measurements, respectively. The experimental data analysis revealed the existence of a critical temperature of 150 K. At this temperature, the transport mechanism is disturbed. The dark conductivity data analysis allowed the determination of ...
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Determination of trapping parameters in Tl4Ga3InSe8 single crystals by thermally stimulated luminescence Delice, S.; Hasanlı, Nızamı (Elsevier BV, 2014-05-15) Thermo luminescence (IL) measurements were performed on Tl4Ga3InSe8 layered single crystals grown by Bridgman method in the temperature range of 10-200 K. After illuminating the sample with blue light at 10 K and heating at a rate of 1.0 K s(-1) in dark, TL curve exhibited peaks around 46 and 123 K. Thermal activation energies of the trap levels corresponding to the observed peaks were determined using curve fitting, initial rise and peak shape methods. Analyses have revealed the presence of two defect cent...

Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Determination of carrier effective mass, impurity energy levels, and compensation ratio in Ga4Se3S layered crystals by Hall effect measurements,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 1662–1665, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41946.