Effect of Au on the crystallization of germanium thin films by electron-beam evaporation

Date

2014-11-01

Author

EYGİ, ZEYNEP DENİZ
KULAKCI, MUSTAFA
Turan, Raşit

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Metal induced crystallization is a widely used method to form crystalline/polycrystalline structures at low temperatures. In this work, Au was applied to enhance the crystallization of amorphous Ge films. Ge films with thicknesses of similar to 1.5 mu m were fabricated by electron beam evaporation on c-Si substrate with and without very thin Au layer. Crystallization properties of Ge films were analyzed for different growth and post annealing temperatures varied between 270 degrees C and 730 degrees C. The structures of polycrystalline Ge films were investigated by employing X-ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM).

Subject Keywords

Poly-Ge, Metal Induced Crystallization, Axial Growth

URI

https://hdl.handle.net/11511/36613

Journal

APPLIED SURFACE SCIENCE

DOI

https://doi.org/10.1016/j.apsusc.2014.01.145

Collections

Department of Physics, Article

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Citation Formats

Z. D. EYGİ, M. KULAKCI, and R. Turan, “Effect of Au on the crystallization of germanium thin films by electron-beam evaporation,” APPLIED SURFACE SCIENCE, pp. 116–120, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36613.