Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix

Date

2008-09-01

Author

Wang, Jiwei
Righini, Marcofabio
Gnoli, Andrea
Foss, Steinar
Finstad, Terje
Serincan, Ugur
Turan, Raşit

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Temperature and size dependence of photoluminescence (PL) of nano-silicon embedded in SiO2 matrix samples were studied. In these measurements, four samples with deferent implantation dose showed their similar tendency. Their nano-structure was investigated by high resolution electron microscopy (HREM) and selected area diffraction (SAD) which confirmed that only those prepared with the higher Si implantation dose formed crystal nano-silicon. The further analysis of the dependence of thermal activation energy on the PL emission energy demonstrates their different behaviors. This leads to an optical method to detect the crystal nano-silicon through comparing their thermal activation energy with the Calcott model, a model that implies the emission from nanocrystallites. Furthermore, the appearance of thermal activation energy in amorphous nano-silicon is discussed in the light of recombination mode of localized carriers through the band-tail state.

Subject Keywords

Materials Chemistry, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/36704

Journal

SOLID STATE COMMUNICATIONS

DOI

https://doi.org/10.1016/j.ssc.2008.07.011

Collections

Department of Physics, Article

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Citation Formats

J. Wang et al., “Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix,” SOLID STATE COMMUNICATIONS, pp. 461–464, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36704.