Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors

Date

2012-07-01

Author

Tugay, Evrin
YILMAZ, ERCAN
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

161
views

0
downloads

The authors studied effects of gamma radiation on the electrical properties of the MOS capacitor made on SiNx thin films with thickness of 100 nm deposited on p-type (100) silicon wafer using plasma-enhanced chemical vapor deposition method. The authors investigated the chemical bonds and their densities inside the films using Fourier transform infrared (FTIR) spectroscopy. The as-deposited and annealed samples with Al/SiNx/Si structure as metal-insulator-semiconductor (MIS) capacitors were exposed to a 60-Co gamma radiation source with a dose rate of 0.015 Gy/S. The authors performed capacitance-voltage measurements at frequencies 10, 100, and 1000 kHz before and after radiation exposure with doses of up to 40 Gy. It was found that before gamma irradiation compared with as-deposited sample, the annealed samples exhibit less negative flatband voltages (V-fb) shift. This indicates the relative reduction in positive charge in the SiNx:H samples. After gamma irradiation, for all samples a negative shift has been observed in V-fb, being more pronounced in the samples annealed at 700 degrees C. The more striking feature is that the amount of shift does not change by increasing radiation dose after first irradiation, in which we attributed what to the radiation hardening in Al/SiNx/Si MIS capacitors. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4720351]

Subject Keywords

Silicon-Nitride, Optical-Properties, Sinx-H, Passivation, İnterface, Pecvd

URI

https://hdl.handle.net/11511/36927

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

DOI

https://doi.org/10.1116/1.4720351

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Effect of electrolyte/sulfur ratio in the cathode on the electrochemical performance of Li-S batteries Emerce, Nur Ber; Külah, Görkem; Eroğlu Pala, Damla; Department of Chemical Engineering (2019) In this study, the effect of electrolyte to sulfur (E/S) ratio in the cathode, which is an important cell design parameter, on the electrochemical and cell- and system-level performance of a Lithium-Sulfur (Li-S) battery is investigated through modeling efforts. First, a 1-D electrochemical model is developed for an isothermal, constant-current discharge of a Li-S cell to predict the voltage at 60% discharge depth. In the model, cathode exchange current density is defined as a linear function of the electro...
Effect of localized states on the photocurrent in amorphous silicon alloys Bebek, Mehmet Bahadır; Atılgan, İsmail; Department of Physics (2009) Amorphous Silicon alloy thin films were deposited by plasma enhanced chemical vapor deposition technique. In order to make optoelectronic measurements, diode structures were fabricated by depositing transparent metal electrodes. Theoretical background of localized density of states in the mobility gap and photocurrent mechanisms has been revisited. In light of this, time of flight technique, using transient photocurrent, was utilized to determine mobility in extended states and characteristic energy of tail...
Effects of pressure and electric field on the charge transport mechanisms in the silver-modified-zeolite porous microstructure Koc, Sevgul Ozturk; Koseoglu, Kivilcim; Galioglu, Sezin; Akata Kurç, Burcu; SALAMOV, BAHTİYAR (2016-03-15) The electrical properties and charge transport mechanisms for nanoporous natural zeolite of clinoptilolite and its silver modified form were studied for the first time in a wide gas pressure range (4-760 Torr) and electric field strength (50-350 kV/cm) at room temperature using two different cell configurations. One of the used cells contained a gas discharge gap, which allowed investigating the electronic conduction route in zeolite cathodes (ZC) as well. The influence of pressure, electric field and cell ...
Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films Anutgan, M.; Anutgan, T. Aliyeva; Ozkol, E.; Atilgan, I.; Katircioglu, B. (2009-09-01) Three sets of boron nitride (BN) thin films are deposited with different N(2)/B(2)H(6) flow ratios (r = 4, 10 and 25) by plasma enhanced chemical vapor deposition (PECVD). The variations of physical properties in different deposition sets are analyzed by optical (XPS, FTIR, UV-visible spectroscopies), mechanical and electrical measurements. The films are considered to be deposited in a turbostratic phase (t-BN). Evolution of bonding configurations with increasing r is discussed. Relatively higher nitrogen f...
Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids BACAKSIZ, EMİN; YILMAZ, ŞERİFE; Parlak, Mehmet; Varilci, A.; Altunbas, M. (Elsevier BV, 2009-06-10) ZnO thin films were deposited on quartz substrate at 550 degrees C by using spray pyrolysis method and subsequently annealed between 600-900 degrees C with a step of 100 degrees C. The characterizations of the structural and optical properties of the films have been carried out by means of X-ray diffraction, scanning electron microscopy (SEM) and optical transmittance measurements. XRD ans SEM images indicated that annealing temperature did not play a great role on the microstructure of ZnO films. ZnO thin ...

Citation Formats

E. Tugay, E. YILMAZ, and R. Turan, “Influence of gamma irradiation on the C-V characteristics of the Al/SiNx/Si MIS capacitors,” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, pp. 0–0, 2012, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36927.