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Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films
Date
2009-09-01
Author
Anutgan, M.
Anutgan, T. Aliyeva
Ozkol, E.
Atilgan, I.
Katircioglu, B.
Metadata
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Three sets of boron nitride (BN) thin films are deposited with different N(2)/B(2)H(6) flow ratios (r = 4, 10 and 25) by plasma enhanced chemical vapor deposition (PECVD). The variations of physical properties in different deposition sets are analyzed by optical (XPS, FTIR, UV-visible spectroscopies), mechanical and electrical measurements. The films are considered to be deposited in a turbostratic phase (t-BN). Evolution of bonding configurations with increasing r is discussed. Relatively higher nitrogen flow rate in the source gas mixture results in lower deposition rates, whereas more ordered films, which tend to reach a unique virtual crystal of band gap 5.93 eV, are formed. Anisotropy in the film structure and film inhomogeneity along the PECVD electrode radial direction are investigated.
Subject Keywords
Amorphous semiconductors
,
III-V semiconductors
,
Composition
,
Optical properties
,
Absorption
,
Optical spectroscopy
,
FTIR measurements
,
Infrared properties
,
Medium-range order
,
XPS
URI
https://hdl.handle.net/11511/67892
Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
DOI
https://doi.org/10.1016/j.jnoncrysol.2009.05.053
Collections
Department of Physics, Article
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M. Anutgan, T. A. Anutgan, E. Ozkol, I. Atilgan, and B. Katircioglu, “Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films,”
JOURNAL OF NON-CRYSTALLINE SOLIDS
, pp. 1622–1629, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67892.