Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids

2009-06-10
BACAKSIZ, EMİN
YILMAZ, ŞERİFE
Parlak, Mehmet
Varilci, A.
Altunbas, M.
ZnO thin films were deposited on quartz substrate at 550 degrees C by using spray pyrolysis method and subsequently annealed between 600-900 degrees C with a step of 100 degrees C. The characterizations of the structural and optical properties of the films have been carried out by means of X-ray diffraction, scanning electron microscopy (SEM) and optical transmittance measurements. XRD ans SEM images indicated that annealing temperature did not play a great role on the microstructure of ZnO films. ZnO thin films are all in hexagonal crystallographic phase and have (0 0 2) preferred orientation, regardless of the annealing temperature. However, SEM studies showed that there exist a high density of micro-rods in the shape of hexagonal pyramid with the width in the order of about 1 mu m and height in range of 1-3 mu m and the adjacent hexagonal crystals to start fusing with each other along their boundaries at high temperatures. As a result of the optical measurements, it was observed that the films show the low transmittance and optical band gap decreases from 3.15 to 3.10eV with the increasing of the annealing temperatures up to 800 degrees C and followed by an increase to 3.20 eV upon further annealing at 900 degrees C.
JOURNAL OF ALLOYS AND COMPOUNDS

Suggestions

Effect of (Mo, W) substitution for Nb on glass forming ability and magnetic properties of Fe-Co-based bulk amorphous alloys fabricated by centrifugal casting
Kucuk, Ilker; Aykol, Muratahan; Uzun, Orhan; Yıldırım, Mehmet; Kabaer, Mehmet; Duman, Nagehan; Yilmaz, Fikret; Erturk, Kadir; Akdeniz, Mahmut Vedat; Mehrabov, Amdulla (Elsevier BV, 2011-02-03)
In this study, effects of simultaneous Mo and W substitution for Nb additions on the stability and magnetic properties of Fe-Co-based bulk metallic glass (BMG) alloys fabricated by centrifugal casting are investigated. The saturation magnetization (J(s)) and coercivity (H(c)) for the as-cast Fe(36)CO(36)B(19.2)Si(4.8)X(4) (X = Nb or Mo(0.5)W(0.5)) BMG alloys and melt-spun Fe(36)Co(36)B(19.2)Si(4.8)Mo(2)W(2) were in the range of 1.02-1.57T and 11.13-1685 A/m, respectively. The Fe(36)Co(36)B(19.2)Si(4.8)X(4) ...
Effects of synthesis, doping methods and metal content on thermoluminescence glow curves of lithium tetraborate
Kayhan, Mehmet; Yılmaz, Ayşen (Elsevier BV, 2011-07-28)
Lithium tetraborate: Li(2)B(4)O(7), (LTB) has been synthesized and doped with various Mn content by different methods, such as, high temperature solid state synthesis and solution assisted synthesis methods. Powder XRD results proved the formation of solid-solution by replacing Mn with Li ions in LTB lattice at lower amount of Mn doping, for example 0.1-3.0% Mn doping. In this research TL glow curves of Mn doped lithium tetraborate (LTB: Mn) produced by using different synthesis and doping methods and the e...
Optical dynamics of MgO/Ga4Se3S interface
Qasrawi, A. F.; Abd-Alrazq, Mariam M.; Hasanlı, Nızamı (Elsevier BV, 2014-01-15)
A new p-n interface made of p-type MgO as an optical window to the n-type Ga4Se3S crystals is investigated by means of optical reflectance, transmittance and absorbance in the incident light wavelength (k) range of 200-1100 nm. The reflectivity spectral analysis as a function of angle of incidence for MgO, Ga4Se3S and the Ga4Se3S/MgO layers revealed Brewster angles of 75 degrees, 80 degrees and 70 degrees with the corresponding dielectric constants of 13.93, 32.16 and eMgO 7: 55eGa(4)Se(3)S, respectively. T...
Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements
ÖZDEMİR, Orhan; Anutgan, Mustafa; Aliyeva-Anutgan, Tamila; Atilgan, Ismail; Katircioglu, Bayram (Elsevier BV, 2009-05-05)
Boron nitride (BN) thin film was grown by plasma enhanced chemical vapor deposition (PECVD) technique and was investigated by UV-Visible transmission, Fourier transform infrared (FTIR) and ac conductance spectroscopies. Mainly the density of electronic localized states (D-it) at BN/Si interface was obtained by continuum and statistical models of ac conductance through an MIS structure (Al/BN film/Si). The origins of the electronic defects have been outlined and discussed within the frame of a nitrogen defic...
Effects of boron doping on solid phase crystallization of in situ doped amorphous Silicon thin films prepared by electron beam evaporation
Sedani, Salar H.; Yasar, Ozlen F.; Karaman, Mehmet; Turan, Raşit (Elsevier BV, 2020-01-31)
In this work, we studied solid-phase crystallization of boron-doped non-hydrogenated amorphous Si films fabricated by electron beam evaporation equipped with effusion cells (e-Beam EC) on silicon nitride coated glass substrates. We investigated the effect of boron doping on the crystallization kinetics through a series of experiments with different boron doping concentrations controlled by the effusion cell temperature. We employed Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, grazing ...
Citation Formats
E. BACAKSIZ, Ş. YILMAZ, M. Parlak, A. Varilci, and M. Altunbas, “Effects of annealing temperature on the structural and optical properties of ZnO hexagonal pyramids,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 367–370, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48884.