Extended wavelength SWIR In GaAs focal plane array: Characteristics and limitations

Arslan, Y.
Oguz, F.
Beşikci, Cengiz
We present the characteristics of large format (640 x 512) short wavelength infrared (SWIR) InGaAs photodetector focal plane array (FPA) with similar to 2.65 mu m room temperature cut-off wavelength. The detector epilayers were grown with solid source molecular beam epitaxy on InP substrates using a linearly graded InALAs buffer layer. In spite of the large lattice mismatch, the FPA yields reasonably good responsivity nonuniformity (9%) with a pixel detectivity above 2 x 10(10) cm Hz(1/2)/W at room temperature. The dark current of the pixels are dominated by generation-recombination (G-R) and shunt leakage mechanisms with negligible tunneling above 200 K up to a reverse bias voltage of 3 V. The results are very encouraging for further study toward the optimization of the epilayer structure and growth conditions in order to provide a lower cost technology alternative to HgCdTe in the SWIR band.


640 x 512 Extended Short Wavelength Infrared In0.83Ga0.17As Focal Plane Array
Arslan, Yetkin; Oguz, Fikri; Beşikci, Cengiz (2014-12-01)
We present the detailed characteristics of solid source molecular beam epitaxy (MBE) grown large format (640 x 512) extended short wavelength infrared In0.83Ga0.17As sensor with desirable performance at both pixel and focal plane array (FPA) levels. The FPA pixels in the mesa structure grown on a graded AlInAs buffer layer with 2.65-mu m, 300-K cutoff wavelength exhibited 300- and 200-K peak detectivities as high as similar to 2.5 x 10(10) and similar to 1 x 10(12) cmHz(1/2)/W, which are both equivalent to ...
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
Ozer, S; Cellek, OO; Beşikci, Cengiz (Elsevier BV, 2005-10-01)
We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs,...
High performance near/short wavelength infrared megapixel InGaAs focal plane array fabrication development and new design proposals
Karaca, Utku; Kocaman, Serdar; Department of Electrical and Electronics Engineering (2018)
In0.53Ga0.47As is the most appropriate material system for Short Wavelength Infrared (SWIR) detection at ~1.7 μm cutoff wavelength with its relatively lower cost and high performance. Ultra-low dark current (~ nA/cm2) has been recently demonstrated in InGaAs photodetectors with planar type process by eliminating surface leakage current. Here, a fabrication procedure for planar InGaAs photodetectors with unique pixel isolation methods has been developed and ~10 nA/cm2 dark current density levels were obtaine...
High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance
Cellek, OO; Ozer, S; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2005-07-01)
We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs...
Near-Infrared Resonant Cavity Enhanced Silicon Microsphere Photodetector
Murib, Mohammed Sharif; Yüce, Emre; GÜRLÜ, Oguzhan; SERPENGÜZEL, Ali (2009-05-06)
Elastic scattering intensity calculations at 90 degrees and 0 degrees for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 mu m radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 10(4).
Citation Formats
Y. Arslan, F. Oguz, and C. Beşikci, “Extended wavelength SWIR In GaAs focal plane array: Characteristics and limitations,” INFRARED PHYSICS & TECHNOLOGY, pp. 134–137, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37045.