Extended wavelength SWIR In GaAs focal plane array: Characteristics and limitations

Date

2015-05-01

Author

Arslan, Y.
Oguz, F.
Beşikci, Cengiz

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We present the characteristics of large format (640 x 512) short wavelength infrared (SWIR) InGaAs photodetector focal plane array (FPA) with similar to 2.65 mu m room temperature cut-off wavelength. The detector epilayers were grown with solid source molecular beam epitaxy on InP substrates using a linearly graded InALAs buffer layer. In spite of the large lattice mismatch, the FPA yields reasonably good responsivity nonuniformity (9%) with a pixel detectivity above 2 x 10(10) cm Hz(1/2)/W at room temperature. The dark current of the pixels are dominated by generation-recombination (G-R) and shunt leakage mechanisms with negligible tunneling above 200 K up to a reverse bias voltage of 3 V. The results are very encouraging for further study toward the optimization of the epilayer structure and growth conditions in order to provide a lower cost technology alternative to HgCdTe in the SWIR band.

Subject Keywords

InGaAs, Photodetector, Short Wavelength Infrared

URI

https://hdl.handle.net/11511/37045

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2014.10.012

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

Y. Arslan, F. Oguz, and C. Beşikci, “Extended wavelength SWIR In GaAs focal plane array: Characteristics and limitations,” INFRARED PHYSICS & TECHNOLOGY, pp. 134–137, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37045.