High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance

Cellek, OO
Ozer, S
Beşikci, Cengiz
We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs QWIPs (20-period) yielded quantum efficiency-gain product as high as 0.46 under -3-V bias with a 77-K peak detectivity above 1 x 10(10) cm center dot Hz(1/2)/W. At 70 K, the detector performance is background limited with f/2 aperture up to similar to 3-V bias where the peak responsivity (2.9 A/W) is an order of magnitude higher than that of the AlGaAs-GaAs QWIP. The results show that impact ionization in similar InP-InGaAs QWIPs does not start until the average electric-field reaches similar to 25 kV/cm, and the detectivity remains high under moderately large bias, which yields high responsivity due to large photoconductive gain. The InP-InGaAs QWIP FPA offers reasonably low noise equivalent temperature difference (NETD) even with very short integration times (tau).70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under bias voltages of -0.5 V (tau = 11 ms) and -2 V (tau = 650 mu s), respectively. The results clearly show the potential of InP-InGaAs QWIPs for thermal imaging applications requiring high responsivity and short integration times.


High Conversion Efficiency InP/InGaAs Strained Quantum Well Infrared Photodetector Focal Plane Array With 9.7 mu m Cut-Off for High-Speed Thermal Imaging
Eker, Suleyman Umut; Arslan, Yetkin; Onuk, Ahmet Emre; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2010-02-01)
InP/InGaAs material system is an alternative to AlGaAs/GaAs for long wavelength quantum well infrared photodetectors (QWIPs). We demonstrate a large format (640 x 512) QWIP focal plane array (FPA) constructed with the strained InP/InGaAs material system. The strain introduced to the structure through utilization of In0.48Ga0.52As (instead of In0.53Ga0.47As) as the quantum well material shifts the cut-off wavelength from similar to 8.5 to 9.7 mu m. The FPA fabricated with the 40-well epilayer structure yield...
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
Ozer, S; Cellek, OO; Beşikci, Cengiz (Elsevier BV, 2005-10-01)
We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs,...
Fabrication of 15-mu m Pitch 640 x 512 InAs/GaSb Type-II Superlattice Focal Plane Arrays
Oguz, Fikri; Arslan, Yetkin; Ulker, Erkin; Bek, Alpan; Ozbay, Ekmel (Institute of Electrical and Electronics Engineers (IEEE), 2019-08-01)
We present the fabrication of large format 640 x 512, 15-mu m pitch, mid-wave infrared region (MWIR) InAs/GaSb type-II superlattice (T2SL) focal plane array (FPA). In this report, the details of device design and fabrication processes are withheld adhering to the common practice of most of the manufactures and developers because of the strategic importance; however, information about fabrication processes of T2SLs FPA is presented to a certain extent. Comparison of etching techniques, passivation materials ...
High power microsecond fiber laser at 1.5 μm
Pavlova, Svitlana; Yagci, M. Emre; Eken, S. Koray; Tunckol, Ersan; Pavlov, Ihor (The Optical Society, 2020-06-08)
© 2020 Optical Society of America.In this work, we demonstrate a single frequency, high power fiber-laser system, operating at 1550 nm, generating controllable rectangular-shape μs pulses. In order to control the amplified spontaneous emission content, and overcome the undesirable pulse steepening during the amplification, a new method with two seed sources operating at 1550 nm and 1560 nm are used in this system. The output power is about 35 W in CW mode, and the peak power is around 32 W in the pulsed mod...
Large-format voltage-tunable dual-color midwavelength infrared quantum-well infrared photodetector focal plane array
Kaldirim, M.; Eker, S. U.; Arslan, Y.; Tümkaya, Umman; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2008-05-01)
We report a large-format (640 x 512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3-5 mu m) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs-InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 mu m (color 1) to 4.7 mu m (color 2) as the bias is increased within th...
Citation Formats
O. Cellek, S. Ozer, and C. Beşikci, “High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance,” IEEE JOURNAL OF QUANTUM ELECTRONICS, pp. 980–985, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47748.