Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array

Date

2005-10-01

Author

Ozer, S
Cellek, OO
Beşikci, Cengiz

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

177
views

0
downloads

We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs, clearly demonstrates the feasibility of the InP/InGaAs material system as an Al-free alternative to AlGaAs/GaAs system for large format LWIR QWIP FPAs.

Subject Keywords

Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42560

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2005.02.016

Collections

Department of Electrical and Electronics Engineering, Article

Suggestions

OpenMETU
Core

High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance Cellek, OO; Ozer, S; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2005-07-01) We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs...
QWIP focal plane arrays on InP substrates for single and dual band thermal imagers Eker, S. U.; Arslan, Y.; Kaldirim, M.; Beşikci, Cengiz (Elsevier BV, 2009-11-01) Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity, when compared to the AlGaAs/CaAs QWIPs, AllnAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.
Fabrication of 15-mu m Pitch 640 x 512 InAs/GaSb Type-II Superlattice Focal Plane Arrays Oguz, Fikri; Arslan, Yetkin; Ulker, Erkin; Bek, Alpan; Ozbay, Ekmel (Institute of Electrical and Electronics Engineers (IEEE), 2019-08-01) We present the fabrication of large format 640 x 512, 15-mu m pitch, mid-wave infrared region (MWIR) InAs/GaSb type-II superlattice (T2SL) focal plane array (FPA). In this report, the details of device design and fabrication processes are withheld adhering to the common practice of most of the manufactures and developers because of the strategic importance; however, information about fabrication processes of T2SLs FPA is presented to a certain extent. Comparison of etching techniques, passivation materials ...
Calculation of the Infrared Frequencies as a Function of Temperature Using the Volume Data in the Ferroelectric Phase of NaNO2 Yurtseven, Hasan Hamit (Informa UK Limited, 2014-02-17) We calculate the temperature dependence of the infrared frequencies of the TO and LO modes with the symmetries of A(1), B-1 and B-2 mainly in the ferroelectric phase of NaNO2. This calculation is carried out using the volume dependence of the infrared frequencies through the mode Gruneisen parameter in this crystal. The volume dependences of the infrared frequencies are fitted to the observed frequencies by using constant mode Gruneisen parameter in the ferroelectric phase of NaNO2. Our results show that th...
Calculation of optimized parameters of rectangular microstrip patch antenna using particle swarm optimization Yilmaz, A. Egemen; Kuzuoğlu, Mustafa (Wiley, 2007-12-01) In this letter, the particle swarm optimization has been applied to calculate the optimized length and width of rectangular inicrostrip antennas. The inputs to the problem are the dielectric constant and thickness of the substrate; together with the desired resonant frequency; the outputs arc the optimized length and width; where the antennas are considered to be electrically thin. The results are in good agreement with the results (experimental and calculated by other heuristics) in the literature. (C) 200...

Citation Formats

S. Ozer, O. Cellek, and C. Beşikci, “Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array,” INFRARED PHYSICS & TECHNOLOGY, pp. 115–118, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42560.