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Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
Date
2005-10-01
Author
Ozer, S
Cellek, OO
Beşikci, Cengiz
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We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs, clearly demonstrates the feasibility of the InP/InGaAs material system as an Al-free alternative to AlGaAs/GaAs system for large format LWIR QWIP FPAs.
Subject Keywords
Atomic and Molecular Physics, and Optics
,
Electronic, Optical and Magnetic Materials
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/42560
Journal
INFRARED PHYSICS & TECHNOLOGY
DOI
https://doi.org/10.1016/j.infrared.2005.02.016
Collections
Department of Electrical and Electronics Engineering, Article
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S. Ozer, O. Cellek, and C. Beşikci, “Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array,”
INFRARED PHYSICS & TECHNOLOGY
, pp. 115–118, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42560.