Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array

Date

2005-10-01

Author

Ozer, S
Cellek, OO
Beşikci, Cengiz

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We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs, clearly demonstrates the feasibility of the InP/InGaAs material system as an Al-free alternative to AlGaAs/GaAs system for large format LWIR QWIP FPAs.

Subject Keywords

Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42560

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2005.02.016

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

S. Ozer, O. Cellek, and C. Beşikci, “Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array,” INFRARED PHYSICS & TECHNOLOGY, pp. 115–118, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42560.