Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)

Date

2007-08-15

Author

İmer, Muhsine Bilge
Speck, James S.
DenBaars, Steven P.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

101
views

0
downloads

Sidewall lateral epitaxial overgrowth (SLEO) is a technique to reduce the extended defect densities in non-polar III-nitrides in a single re-growth by employing lateral overgrowth from sidewalls of an etched nitride through the mask openings. The technique involved depositing a stripe patterned mask over a-plane (11 (2) over bar0) GaN along < 1 (1) over tilde 00 >(GaN) and creating vertical {0001}c-plane sidewalls by etching of nitride through the openings in the mask at a depth so that in the first growth stage, coalescence was achieved from the sidewalls before the growth of defected material trench bottom impeded lateral sidewall growth. After achieving the first-stage coalescence from the sidewalls, the material was grown over in two subsequent stages-growing up through the window openings, and then over the mask region until a smooth coalesced film was achieved. In this paper, we describe the effect of growth variables on material quality in all three stages of growth evolution in SLEO until coalescence. With the SLEO technique, threading dislocation densities of 10(6)-10(7) cm(-2) and stacking fault densities Of 10(3)-10(4)cm(-1) were achieved in non-polar a-plane (11 (2) over bar0) GaN grown over r-plane sapphire.

Subject Keywords

Inorganic Chemistry, Materials Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37388

Journal

JOURNAL OF CRYSTAL GROWTH

DOI

https://doi.org/10.1016/j.jcrysgro.2007.05.027

Collections

Department of Metallurgical and Materials Engineering, Article

Suggestions

OpenMETU
Core

Growth of gold films on quartz surfaces for quartz crystal microbalance application Özkan, Berrin; Danışman, Mehmet Fatih; Department of Chemistry (2010) In this study, we have investigated the effect of substrate temperature, use of adhesive layer, deposition rate, annealing and substrate prebaking on the morphology of gold films deposited onto quartz surfaces. For the film growth, physical vapor deposition methods namely electron beam and thermal depositions have been used. Surface morphology of the films have been characterized with atomic force microscopy. Our aim was to confirm the general trends observed for these parameters in our evaporator system fo...
Multilayer-derived, ultrathin, stimuli-responsive hydrogels Kozlovskaya, Veronika; Kharlampieva, Eugenia; Erel Göktepe, İrem; Sukhishvili, Svetlana A. (Royal Society of Chemistry (RSC), 2009-01-01) In addition to a well-known capacity of the layer-by-layer (LbL) technique to create multilayers with strongly bound polymer chains, the technique also provides a unique opportunity to fabricate highly swollen, hydrogel-like films and capsules. Layered, ultrathin hydrogel-like membranes can be fabricated using electrostatically assembled or hydrogen-bonded multilayers as template matrices, or using a click chemistry approach. This review describes recent progress in the area, comparing various approaches us...
Gypsum crystal size distribution in four continuous flow stirred slurry boric acid reactors in series compared with the batch Cakal, GO; Eroglu, I; Özkar, Saim (Elsevier BV, 2006-04-15) Colemanite, one of the important boron minerals, is dissolved in aqueous sulfuric acid to produce boric acid. In this reaction, gypsum is obtained as a by-product. Gypsum crystals are in the shape of thin needles. These crystals should be grown to an easily filterable size in order to increase the production yield and purity of boric acid. In this paper, the particle size distributions and the volume-weighted mean diameters of the gypsum crystals obtained in batch and continuous flow systems were compared. ...
Low-field AC susceptibility in Pr1-xHoxMn2Ge2 Kilic, A.; Kervan, N.; Kervan, S.; Gencer, Ayşenur; Ozkan, H. (Elsevier BV, 2007-01-01) We report the structure and magnetic properties of Pr1-xHoxMn2Ge2 (0.0 <= x <= 1.0) germanides by means of X-ray diffraction (XRD), differential scanning calorimetry (DSC) techniques and AC magnetic susceptibility measurements. All compounds crystallize in the ThCr2Si2-type structure with the space group I 4/mmm. Substitution of Ho for Pr leads to a linear decrease in the lattice constants and the unit cell volume. The samples with x = 0 and x = 0.8 have spin reorientation temperature. The results are colle...
Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) İmer, Muhsine Bilge; Haskell, Ben; Rajan, Siddharth; Zhong, Barry; Kim, Kwangchoong; Wu, Feng; Mates, Tom; Keller, Stacia; Mishra, Umesh K.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P. (Wiley, 2008-07-01) High quality nonpolar a-plane GaN templates were grown by utilizing sidewall lateral epitaxial overgrowth (SLEO) technique with threading dislocation density of similar to 10(6)-10(7) cm(-2). 360 run GaN/AlGaN multiple quantum well ultraviolet light emitting diodes were grown with metalorganic chemical vapor deposition. Reduced defect density SLEO a-plane, planar a-plane, and planar c-plane templates were co-loaded for device growth and processed together in order to make relative device performance compari...

Citation Formats

M. B. İmer, J. S. Speck, and S. P. DenBaars, “Growth evolution in sidewall lateral epitaxial overgrowth (SLEO),” JOURNAL OF CRYSTAL GROWTH, pp. 330–338, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37388.