Low-field AC susceptibility in Pr1-xHoxMn2Ge2

Kilic, A.
Kervan, N.
Kervan, S.
Gencer, Ayşenur
Ozkan, H.
We report the structure and magnetic properties of Pr1-xHoxMn2Ge2 (0.0 <= x <= 1.0) germanides by means of X-ray diffraction (XRD), differential scanning calorimetry (DSC) techniques and AC magnetic susceptibility measurements. All compounds crystallize in the ThCr2Si2-type structure with the space group I 4/mmm. Substitution of Ho for Pr leads to a linear decrease in the lattice constants and the unit cell volume. The samples with x = 0 and x = 0.8 have spin reorientation temperature. The results are collected in a phase diagram.


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The optical properties of the TlInS2xSe2(1-x) mixed crystals (0.25 <= x <= 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS2xSe2(1-x) mixed crystals. The transmission measurements carried out in the temperature range of 10-300 K reve...
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Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
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Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k perpendicular to c) and parallel to the c-axis (k//c). Peak...
Citation Formats
A. Kilic, N. Kervan, S. Kervan, A. Gencer, and H. Ozkan, “Low-field AC susceptibility in Pr1-xHoxMn2Ge2,” SOLID STATE COMMUNICATIONS, pp. 223–227, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/57114.