Fabrication and characterization of p-Si/n-ZnO heterostructured junctions

Date

2009-04-01

Author

Klason, P.
Rahman, M. M.
Hu, Q. -H.
Nur, O.
Turan, Raşit
Willander, M.

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In this paper ZnO nanorods and nanodots (with and without a SiO2 buffer layer) were grown on p-Si, forming p-n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3.91 +/- 0.11 together with a reverse saturation current of 6.53 +/- 4.2 x 10(-8) A. Up to two orders of magnitude rectification was observed for the current at bias -3 and 3 V. The nanodot devices showed EL emission under forward bias conditions. It seems that the buffer layer increased both the stability and efficiency of the devices, since the buffer layer device could operate at larger applied voltage and showed EL emission under reverse bias.

Subject Keywords

General Engineering

URI

https://hdl.handle.net/11511/37429

Journal

MICROELECTRONICS JOURNAL

DOI

https://doi.org/10.1016/j.mejo.2008.07.070

Collections

Department of Physics, Article

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Citation Formats

P. Klason, M. M. Rahman, Q.-H. Hu, O. Nur, R. Turan, and M. Willander, “Fabrication and characterization of p-Si/n-ZnO heterostructured junctions,” MICROELECTRONICS JOURNAL, pp. 706–710, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37429.