Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

2003-01-01
KARABULUT, ORHAN
Parlak, Mehmet
Yılmaz, Koray Kamil
Turan, Raşit
Akınoğlu, Bülent Gültekin
Show full item record
Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
153
views
0
downloads
GaSe single crystals grown by Bridgman method have been doped by ion implantation technique. The samples were bombarded in the direction parallel to c-axis by Si ion beam of about 100 keV to doses of 1x10(16) ions/cm(2) at room temperature. The effects of Si implantation with annealing at 500 and 600 degreesC on the electrical properties have been studied by measuring the temperature dependent conductivity and photoconductivity under different illumination intensities in the temperature range of 100-320 K. It is observed that Si implantation increases the room temperature conductivity 10(-7) to 10(-3) (Ohm-cm)(-1) depending on the post annealing temperature. The analysis of temperature dependent conductivity shows that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Annealing of the samples at and above 600 degreesC weakens the temperature dependence of the conductivity and photoconductivity. This indicates that annealing of the implanted samples activates Si-atoms and increases structural deformations and stacking faults. The same behavior was observed from photoconductivity measurements. Hence, photocurrent-illumination intensity dependence in the implanted samples obeys the power low I-pc proportional to Phi(n) with n between 1 and 2 which is an indication of continuous distribution of localized states in the band gap. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
General Materials Science, General Chemistry, Condensed Matter Physics
https://hdl.handle.net/11511/37595
CRYSTAL RESEARCH AND TECHNOLOGY
Department of Physics, Article

Suggestions

Sol-gel synthesis and photocatalytic activity of B and Zr co-doped TiO2
Kapusuz, Derya; PARK, JONGEE; Öztürk, Abdullah (Elsevier BV, 2013-07-01)
Effects of boron (B) and/or zirconium (Zr) doping on photocatalytic activity of sol-gel derived titania (TiO2) powders were investigated. A conventional, non-hydrous sol-gel technique was applied to synthesize the B, Zr doped/co-doped TiO2 powders. Doping was made at molar ratios of Ti/B=1 and Ti/Zr=10. Sol-gel derived xero-gels were calcined at 500 degrees C for 3 h. The crystal chemistry and the morphology of the undoped and B, Zr doped/co-doped TiO2 nanoparticles were investigated using X-ray diffractome...
Lattice vibrations of pure and doped GaSe
Allakhverdiev, K; Baykara, T; Ellialtıoğlu, Süleyman Şinasi; Hashimzade, F; Huseinova, D; Kawamura, K; Kaya, AA; Kulibekov, AM; Onari, S (Elsevier BV, 2006-04-13)
The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the ...
Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals
KARABULUT, ORHAN; Parlak, Mehmet; Turan, Raşit; SERİNCAN, UĞUR; Akınoğlu, Bülent Gültekin (Wiley, 2006-03-01)
The structure and temperature dependent spectral photoconductivity of as-grown and N-and Si-implanted GaSe single crystals have been studied. It was observed that post-annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increa...
Thermally stimulated current measurements in undoped Ga3InSe4 single crystals
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2011-06-01)
The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonabl...
Crystallization of silicalite-1 from clear synthesis solutions: Effect of template concentration on crystallization rate and crystal size
Soydas, B.; Çulfaz Emecen, Pınar Zeynep; Kalıpçılar, Halil; Culfaz, A. (Wiley, 2009-08-01)
Synthesis of silicalite-1 powders and membranes from initially clear solutions with different tetrapropylammonium hydroxide or bromide concentrations was studied. While tetrapropylammonium bromide acts only as template, tetrapropylammonium hydroxide provides both the template and hydroxyl ions to the synthesis medium. The effects of template and hydroxyl ion concentration on the product yield, crystallization rate and crystal size were investigated. Pure and highly crystalline silicalite-1 was obtained with...
Citation Formats
O. KARABULUT, M. Parlak, K. K. Yılmaz, R. Turan, and B. G. Akınoğlu, “Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 1071–1076, 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37595.
METU IIS - Integrated Information Service open@metu.edu.tr