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The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K. In most cases samples showed near ideal I-V characteristics. The transition from Cr-Si to CrSi2-Si upon annealing at 440-degrees-C was observed from the variation of the barrier height. The barrier height and the ideality factor were found to be temperature independent for p-type samples. The deviations from the ideality in n-type samples are discussed in terms of the current mechanisms that might contribute to the total measured value.