The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K. In most cases samples showed near ideal I-V characteristics. The transition from Cr-Si to CrSi2-Si upon annealing at 440-degrees-C was observed from the variation of the barrier height. The barrier height and the ideality factor were found to be temperature independent for p-type samples. The deviations from the ideality in n-type samples are discussed in terms of the current mechanisms that might contribute to the total measured value.


Thermally stimulated currents in layered Ga4SeS3 semiconductor
Aytekin, S; Yuksek, NS; Goktepe, M; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-10-01)
Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calc...
Photoelectronic and electrical properties of InS crystals
Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01)
To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices
Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01)
In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Temperature dependence of a CrSi2 Schottky barrier on n-type and p-type Si
Anilturk, OS; Turan, Raşit (IOP Publishing, 1999-12-01)
Electrical transport through CrSi2-Si Schottky junctions was studied by internal photoemission spectroscopy and electrical current-voltage (I-V) techniques in a wide temperature range. The apparent barrier height and the ideality factor derived by using thermionic emission theory were found to be strongly temperature dependent. Internal photoemission measurements yielded a weakly temperature-dependent barrier height for these samples. This difference between optical and electrical results shows that the opt...
Citation Formats
R. Turan, “SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1999–2002, 1993, Accessed: 00, 2020. [Online]. Available: