SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS

Date

1993-11-01

Author

Turan, Raşit

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The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K. In most cases samples showed near ideal I-V characteristics. The transition from Cr-Si to CrSi2-Si upon annealing at 440-degrees-C was observed from the variation of the barrier height. The barrier height and the ideality factor were found to be temperature independent for p-type samples. The deviations from the ideality in n-type samples are discussed in terms of the current mechanisms that might contribute to the total measured value.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37597

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/8/11/010

Collections

Department of Physics, Article

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Citation Formats

R. Turan, “SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1999–2002, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37597.