Temperature dependence of a CrSi2 Schottky barrier on n-type and p-type Si

Date

1999-12-01

Author

Anilturk, OS
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

197
views

0
downloads

Electrical transport through CrSi2-Si Schottky junctions was studied by internal photoemission spectroscopy and electrical current-voltage (I-V) techniques in a wide temperature range. The apparent barrier height and the ideality factor derived by using thermionic emission theory were found to be strongly temperature dependent. Internal photoemission measurements yielded a weakly temperature-dependent barrier height for these samples. This difference between optical and electrical results shows that the optical transport was dominated by a single photoemission over the expected barrier at the junction while the electrical transport was determined by more than one current mechanism. For p-type substrates, the same barrier height values were obtained from both electrical and optical measurements in a much wider temperature range. A model based on the presence of more than one current channel and mechanisms was developed in order to describe the measured I-V curves of both types. It was assumed that the junction's interface contains small regions through which charge carriers can tunnel. Experimental results were reproduced reasonably well by using this approach. Some recent models proposed for the electrical transport in metal-semiconductor junctions are also discussed.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/49266

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/14/12/308

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01) Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Temperature effect on dark electrical conductivity, Hall coefficient, space charge limited current and photoconductivity of TlGaS2 single crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2005-05-01) The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conduct...
Photoelectronic and electrical properties of InS crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01) To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Thermally stimulated currents in layered semiconductor Tl4In3GaS8 Hasanlı, Nızamı; Mogaddam, N. A. P. (IOP Publishing, 2006-09-01) We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found...
Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2004-03-01) TlGaSe2 layered crystals are studied through dark electrical conductivity, Hall mobility, space-charge limited current and illumination- and temperature-dependent photoconductivity in the temperature ranges 120-350 K, 220-350 K, 260-350 K and 120-350 K, respectively. The Hall effect measurements revealed the extrinsic p-type conduction. The Hall mobility increase with decreasing temperature is limited by the thermal lattice scattering. The space-charge limited current and dark conductivity measurements pred...

Citation Formats

O. Anilturk and R. Turan, “Temperature dependence of a CrSi2 Schottky barrier on n-type and p-type Si,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1060–1064, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49266.