On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

Parlaktuerk, F.
Altindal, S.
Tataroglu, A.
Parlak, Mehmet
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-ferroclectric-insulator-semiconductor (Au/Bi4Ti3O12/SiO2/n-Si) structures (MFIS) were investigated by considering series resistance (R-s) and surface state effects in the frequency range of 1 kHz-5 MHz. The experimental C-V-f and G/omega-V-f characteristics of MFIS structures show fairly large frequency dispersion especially at low frequencies due to R-s and N-ss. In addition, the high frequency capacitance (C-m) and conductance (G(m)/omega) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real capacitance of MFIS structures. The R-s-V plots exhibit anomalous peaks between inversion and depletion regions at each frequency and peak positions shift towards positive bias with increasing frequency. The C-2-Vplot gives a straight line in wide voltage region, indicating that interface states and inversion layer charge cannot follow the ac signal in the depletion region, but especially in the strong inversion and accumulation region. Also, it has been shown that the surface state density decreases exponentially with increasing frequency. The C-V-f and G/w-V-f characteristics confirm that the interface state density (N-ss) and series resistance (R-s) of the MFIS structures are important parameters that strongly influence the electrical properties of MFIS structures.


On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique
Korucu, D.; Turut, A.; Turan, Raşit; Altindal, Ş. (Springer Science and Business Media LLC, 2012-6-25)
The frequency dependent of the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of -5 - 5 V at room temperature. The effects of surface states (N (ss)) and series resistance (R (s)) on C-V and G/w-V characteristics have been investigated in detail. The frequency dependent N (ss) and R (s) profiles were obtained for various applied bias voltages. The experimental...
Prospects of FMCW-based frequency diverse array radar
Cetiner, Ramazan; Cetintepe, Cagri; Demir, Şimşek; Hizal, Altunkan (2019-11-01)
The linear frequency modulated (LFM) frequency modulated continuous wave (FMCW)-based frequency diverse array (FDA) radar concept is investigated in detail. The radar operates as a linear pulsed FMCW/FDA in the transmission (TX) mode while it operates as a pulsed FMCW/phased array (PA) in the receiving mode. The issues such as low signal-to-noise ratio (SNR) of FDA, the time-angle scanning and time-range ambiguities are studied. It is shown that the local instantaneous frequency bandwidth is much smaller th...
A Solution to the Adhesion Problem of Oxide Thin Films on Zinc Selenide Optical Substrates
Cosar, M. B.; Aydogdu, G. H.; Batman, H.; Ozhan, A. E. S. (2016-05-13)
Zinc selenide optical substrates have high transparency within the 0.5- to 14.0-mu m wavelength range. This makes them an attractive candidate for multiband imaging applications in optical components. In order to minimize reflection loss in visible, near-infrared, and mid-infrared applications, zinc selenide lenses are coated with multi-layered oxide thin films by physical vapor deposition method or ion beam deposition. In this study, a four-layer anti-reflective filter at 1.064 gm and between 3.6 and 4.9 g...
Investigation of microwave metamaterial based on H-shaped resonator in a waveguide configuration and its sensor and absorber applications
Sabah, Cumali; Taygur, Mehmet Mert; ZORAL, EMİNE YEŞİM (2015-04-13)
A microwave metamaterial (MTM) based on H-shaped resonator in a waveguide configuration is introduced and investigated both numerically and experimentally for X-band frequencies. The proposed model is designed and fabricated on both sides of the substrate and exhibits strong magnetic resonance at around 10.5GHz. Additionally, it has very simple design which improves and simplifies the fabrication process. Besides, only one single slab is used in the simulation and experiment which provides a reduction in th...
Calculation of the ν4 (NH4) IR Mode Frequency and the Damping Constant (FWHM) close to the Phase Transitions in NH4ZN(HCOO)3 and ND4ZN(DCOO)3
KURT, ARZU; Yurtseven, Hasan Hamit; KURT, MUSTAFA (2019-09-01)
Temperature dependence of the IR frequency and the damping constant (FWHM) of the ν4(1440 cm-1) NH4+and ν4(1084 cm-1) ND4+ modes, are calculated for the metal formate frameworks (MOFs) of NH4Zn(HCOO)3 and ND4Zn(DCOO)3, respectively, by using the experimental data from the literature. By assuming the IR frequency of the ν4 mode as an order parameter, its temperature dependence is calculated close to the phase transition (TC=191 K) in the NH4Zn(HCOO)3 and ND4Zn(DCOO)3 by the molecular field theory. The temper...
Citation Formats
F. Parlaktuerk, S. Altindal, A. Tataroglu, M. Parlak, and A. AGASİEV, “On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures,” MICROELECTRONIC ENGINEERING, pp. 81–88, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37790.