Demonstration and performance assessment of large format InP-InGaAsP quantum-well infrared photodetector focal plane array

Ozer, S.
Tümkaya, Umman
Asici, B.
Beşikci, Cengiz
There have been various studies showing that InP-InGaAs quantum-well infrared photodetectors (QWIPs) are potential alternatives to AlGaAs-GaAs QWIPs in the long wavelength infrared (LWIR) band, especially for applications requiring high responsivity. Being on InP substrate, this material system also offers lattice matched mid-wavelength infrared (MWIR)/LWIR dual band QWIP stack when it is used with the AlInAs-InGaAs system. It is desirable to extend the cut-off wavelength of Inp based LWIR QWIPs to similar to 9 mu m, which can be accomplished by replacing the QW material with InGaAsP. In this paper, we report the first InP-InGaAsP QWIP focal plane array (FPA). The 640 x 512 FPA displayed remarkably low noise equivalent temperature difference (NETD) with very short integration times'(46 mK at 66 K with T-int = 440 mu s and f/1.5 optics). The results show that these QWIPs can be operated with high responsivity (> 1 A/W) while offering bias adjustable gain in a wide range where the detectivity is almost constant at a reasonably high level.


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InP/InGaAs material system is an alternative to AlGaAs/GaAs for long wavelength quantum well infrared photodetectors (QWIPs). We demonstrate a large format (640 x 512) QWIP focal plane array (FPA) constructed with the strained InP/InGaAs material system. The strain introduced to the structure through utilization of In0.48Ga0.52As (instead of In0.53Ga0.47As) as the quantum well material shifts the cut-off wavelength from similar to 8.5 to 9.7 mu m. The FPA fabricated with the 40-well epilayer structure yield...
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Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
Ozer, S; Cellek, OO; Beşikci, Cengiz (Elsevier BV, 2005-10-01)
We report the fabrication and characteristics of large format (640 x 512) InP/In0.53Ga0.47As long wavelength infrared (LWIR) quantum well infrared photodetector (QWIP) focal plane array (FPA). The FPA, which is hybridized to a read-out integrated circuit having a charge capacity of 1.1 x 10(7) electrons, yielded a mean noise equivalent temperature difference (NETD) of similar to 40 mK at a cold finger temperature as high as 77 K. The performance of the FPA, being comparable to that of AlGaAs/GaAs QWIP FPAs,...
Citation Formats
S. Ozer, U. Tümkaya, B. Asici, and C. Beşikci, “Demonstration and performance assessment of large format InP-InGaAsP quantum-well infrared photodetector focal plane array,” IEEE JOURNAL OF QUANTUM ELECTRONICS, pp. 709–713, 2007, Accessed: 00, 2020. [Online]. Available: