High Conversion Efficiency InP/InGaAs Strained Quantum Well Infrared Photodetector Focal Plane Array With 9.7 mu m Cut-Off for High-Speed Thermal Imaging

Eker, Suleyman Umut
Arslan, Yetkin
Onuk, Ahmet Emre
Beşikci, Cengiz
InP/InGaAs material system is an alternative to AlGaAs/GaAs for long wavelength quantum well infrared photodetectors (QWIPs). We demonstrate a large format (640 x 512) QWIP focal plane array (FPA) constructed with the strained InP/InGaAs material system. The strain introduced to the structure through utilization of In0.48Ga0.52As (instead of In0.53Ga0.47As) as the quantum well material shifts the cut-off wavelength from similar to 8.5 to 9.7 mu m. The FPA fabricated with the 40-well epilayer structure yields a peak quantum efficiency as high as 12% with a broad spectral response (Delta lambda/lambda(p) = 17%). The peak responsivity of the FPA pixels is 1.4 A/W corresponding to 20% conversion efficiency in the bias region where the detectivity is reasonably high (2.6 x 10(10) cmHz(1/2) /W, f/1.5, 65 K). The FPA providing a background limited performance temperature higher than 65 K (f/1.5) satisfies the requirements of most low integration time/low background applications where AlGaAs/GaAs QWIPs suffer from read-out circuit noise limited sensitivity due to lower conversion efficiencies. Noise equivalent temperature differences of the FPA are as low as 19 and 40 mK with integration times as short as 1.8 ms and 430 mu s (f/1.5, 65 K).


High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance
Cellek, OO; Ozer, S; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2005-07-01)
We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640 x 512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (lambda(p) = similar to 7.8 mu m) were also fabricated and characterized for comparison. InP-InGaAs...
Demonstration and performance assessment of large format InP-InGaAsP quantum-well infrared photodetector focal plane array
Ozer, S.; Tümkaya, Umman; Asici, B.; Beşikci, Cengiz (Institute of Electrical and Electronics Engineers (IEEE), 2007-07-01)
There have been various studies showing that InP-InGaAs quantum-well infrared photodetectors (QWIPs) are potential alternatives to AlGaAs-GaAs QWIPs in the long wavelength infrared (LWIR) band, especially for applications requiring high responsivity. Being on InP substrate, this material system also offers lattice matched mid-wavelength infrared (MWIR)/LWIR dual band QWIP stack when it is used with the AlInAs-InGaAs system. It is desirable to extend the cut-off wavelength of Inp based LWIR QWIPs to similar ...
High-x InP/InxGa1-xAs quantum well infrared photodetector
Beşikci, Cengiz (Elsevier BV, 2018-12-01)
Quantum well infrared photodetector (QWIP) technology is still the only thermal imaging sensor technology providing excellent pixel operability, uniformity and stability together with low production cost and insignificant 1/f noise. The main bottleneck of the standard QWIP technology is the low quantum efficiency and device gain inhibiting the utilization of the sensor for low background and/or high frame rate applications. This manuscript reports unusually high quantum efficiency observed in mid-wavelength...
Improving the absorption of solar cells using antenna-inspired cavities
Karaosmanoğlu, Barışcan; Tuygar, Emre; Topçuoğlu, Ulaş; Ergül, Özgür Salih (Wiley, 2019-08-01)
We present new types of nanocavities to improve the absorption of solar cells for energy harvesting in wide frequency ranges of the optical spectrum. Using a full‐wave approach, as opposed to the commonly used ray‐based modeling of the light, antenna‐inspired cavities with horn shapes are proposed and introduced. The effectiveness of the designed cavities is demonstrated in comparison to the conventional textures involving inverted pyramids and nanocones. Highly accurate numerical results show that solar‐ce...
High power microsecond fiber laser at 1.5 μm
Pavlova, Svitlana; Yagci, M. Emre; Eken, S. Koray; Tunckol, Ersan; Pavlov, Ihor (The Optical Society, 2020-06-08)
© 2020 Optical Society of America.In this work, we demonstrate a single frequency, high power fiber-laser system, operating at 1550 nm, generating controllable rectangular-shape μs pulses. In order to control the amplified spontaneous emission content, and overcome the undesirable pulse steepening during the amplification, a new method with two seed sources operating at 1550 nm and 1560 nm are used in this system. The output power is about 35 W in CW mode, and the peak power is around 32 W in the pulsed mod...
Citation Formats
S. U. Eker, Y. Arslan, A. E. Onuk, and C. Beşikci, “High Conversion Efficiency InP/InGaAs Strained Quantum Well Infrared Photodetector Focal Plane Array With 9.7 mu m Cut-Off for High-Speed Thermal Imaging,” IEEE JOURNAL OF QUANTUM ELECTRONICS, pp. 164–168, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47407.