Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Date

2008-10-01

Author

Goksen, K.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

93
views

0
downloads

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl4In3GaS8-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52eV, respectively. The rate of change of the indirect band gap with temperature dE(gi)/dT = -6.0 x 10(-4) eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E-gi(0) = 2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-Di Domenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48 x 10(13) m(-2) and 2.55, respectively. (C) 2008 Elsevier Ltd. Ail rights reserved.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38573

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/j.jpcs.2008.03.035

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Dispersive optical constants and temperature tuned band gap energy of Tl2InGaS4 layered crystals Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (IOP Publishing, 2007-06-27) The optical properties of Tl2InGaS4 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 400-1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.35 and 2.54 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma =...
Composition-tuned band gap energy and refractive index in GaSxSe1-x layered mixed crystals IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2017-04-01) Transmission and reflection measurements on GaSxSe1-x mixed crystals (0 <= x <= 1) were carried out in the 400-1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive i...
Infrared photoluminescence from TlGaS2 layered single crystals Yuksek, NS; Hasanlı, Nızamı; Aydinli, A; Ozkan, H; Acikgoz, M (Wiley, 2004-09-01) Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K, We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing tempera...
Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01) Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...

Citation Formats

K. Goksen and N. Hasanlı, “Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 2385–2389, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38573.