Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Composition-tuned band gap energy and refractive index in GaSxSe1-x layered mixed crystals
Date
2017-04-01
Author
IŞIK, MEHMET
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
260
views
0
downloads
Cite This
Transmission and reflection measurements on GaSxSe1-x mixed crystals (0 <= x <= 1) were carried out in the 400-1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive indices of the mixed crystals were plotted using the reflectance spectra. It was observed that refractive index decreases nearly in a linear behavior with increasing band gap energy for GaSxSe1-x mixed crystals. Moreover, the composition ratio of the mixed crystals was obtained from the energy dispersive spectroscopy measurements. The atomic compositions of the studied crystals are well-matched with composition x increasing from 0 to 1 by intervals of 0.25.
Subject Keywords
General Materials Science
,
Condensed Matter Physics
URI
https://hdl.handle.net/11511/36376
Journal
MATERIALS CHEMISTRY AND PHYSICS
DOI
https://doi.org/10.1016/j.matchemphys.2016.12.059
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals
Goksen, K.; Hasanlı, Nızamı (Elsevier BV, 2008-10-01)
Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl4In3GaS8-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52eV, respectively. The rate of change of the indirect band gap with temperature dE(gi)/dT = -6.0 x 10(-4) eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero valu...
Dispersive optical constants and temperature tuned band gap energy of Tl2InGaS4 layered crystals
Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (IOP Publishing, 2007-06-27)
The optical properties of Tl2InGaS4 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 400-1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.35 and 2.54 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma =...
Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-04-18)
Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was obs...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals
Hasanlı, Nızamı (Wiley, 2009-03-01)
The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Reflectance spectra and refractive index of a Nd : YAG laser-oxidized Si surface
Aygun, G; Atanassova, E; Turan, Raşit; Babeva, T (Elsevier BV, 2005-02-15)
The reflectance spectra and refractive index of Nd:YAG laser-oxidized SiO2 layers with thicknesses from 15 to 75 nm have been investigated with respect to the laser beam energy density and substrate temperature. Thickness and refractive index of films have been determined from reflectance measurements at normal light incidence in the spectral range 300-800 nm. It was found that the oxide-growth conditions at higher substrate temperatures and laser powers greater than 3.36 J cm(-2) provides a better film qua...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. IŞIK and N. Hasanlı, “Composition-tuned band gap energy and refractive index in GaSxSe1-x layered mixed crystals,”
MATERIALS CHEMISTRY AND PHYSICS
, pp. 74–78, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36376.