Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

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Date

2008-02-01

Author

İmer, Muhsine Bilge
Rajan, Siddharth
Keller, Stacia
Mishra, Umesh K.
Nakamura, Shuji
Speck, James S.
DenBaars, Steven P.

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We studied the effect of extended defects on electrical characteristics of Si doped n-type nonpolar a-plane GaN films. The n-type GaN layers were grown on co-loaded reduced defect density sidewall lateral epitaxial overgrowth (SLEO) a-plane GaN templates and high defect density planar a-plane GaN templates by metalorganic chemical vapor deposition (MOCVD). The highest conductivity value was observed at the carrier concentration of 1.05 x 10(19) cm(-3) as 261.12 cm(2)/Vs for SLEO a-GaN and 106.77 cm(2)/Vs for the planar a-plane GaN samples. At the same doping level, the carrier compensation for SLEO samples was similar to 12% less than planar samples.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38683

Journal

JOURNAL OF MATERIALS RESEARCH

DOI

https://doi.org/10.1557/jmr.2008.0069

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

M. B. İmer et al., “Electrical characterization of low defect density nonpolar (11(2)over-bar0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO),” JOURNAL OF MATERIALS RESEARCH, pp. 551–555, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38683.