Structural properties of a-Si films and their effect on aluminum induced crystallization

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Date

2015-10-01

Author

Tankut, Aydin
Karaman, Mehmet
Ozkol, Engin
Canlı, Sedat
Turan, Raşit

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In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Subject Keywords

Hydrogenated amorphous-silicon, Network disorder, Layer exchange, Nucleation, Alloys

URI

https://hdl.handle.net/11511/39147

Journal

AIP Advances

DOI

https://doi.org/10.1063/1.4933193

Collections

Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article

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Citation Formats

A. Tankut, M. Karaman, E. Ozkol, S. Canlı, and R. Turan, “Structural properties of a-Si films and their effect on aluminum induced crystallization,” AIP Advances, pp. 0–0, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39147.