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Structural properties of a-Si films and their effect on aluminum induced crystallization
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Date
2015-10-01
Author
Tankut, Aydin
Karaman, Mehmet
Ozkol, Engin
Canlı, Sedat
Turan, Raşit
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Subject Keywords
Hydrogenated amorphous-silicon
,
Network disorder
,
Layer exchange
,
Nucleation
,
Alloys
URI
https://hdl.handle.net/11511/39147
Journal
AIP Advances
DOI
https://doi.org/10.1063/1.4933193
Collections
Test and Measurement Center In advanced Technologies (MERKEZ LABORATUVARI), Article
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A. Tankut, M. Karaman, E. Ozkol, S. Canlı, and R. Turan, “Structural properties of a-Si films and their effect on aluminum induced crystallization,”
AIP Advances
, pp. 0–0, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39147.