Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

Date

2014-03-25

Author

Tascioglu, Ilke
Farooq, W. A.
Turan, Raşit
ALTINDAL, ŞEMSETTİN
YAKUPHANOĞLU, FAHRETTİN

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MnZnO films were grown onto p-Si substrate by sol-gel spin coating method. The electrical properties of the diodes were investigated at room temperature via the current-voltage (I-V), capacitance-voltagefrequency (C-V-f), and conductance-voltage-frequency (G-V-f) methods by considering the effect of the interface trap density (D-it) and series resistance (Rs) of the diodes. The rectifying ratio (RR) values of undoped and Mn-doped ZnO/ p-Si diodes (at +/- 4 V) were found to be 275 and 2031, respectively. Mn doping decreases leakage current and increases shunt resistance (R-sh). Also, the reasons of discrepancies in barrier height values determined from different methods were discussed. The C-V and G-V measurements were performed at various frequencies. We observe additional contribution to the capacitance at low frequencies due to interface traps which can follow the ac test signal easily. The density of interface traps (D-it) determined from Hill-Coleman method was also presented for making comparison. The D-it values vary from 9.24 x 10(11) to 1.67 x 10(13) eV(-1) cm(-2) and 2.06 x 10(11) to 2.54 x 10(12) eV(-1) cm(-2) for undoped and Mn-doped ZnO/p-Si diodes, respectively.

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Metals and Alloys

URI

https://hdl.handle.net/11511/39237

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2013.12.043

Collections

Department of Physics, Article

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Citation Formats

I. Tascioglu, W. A. Farooq, R. Turan, Ş. ALTINDAL, and F. YAKUPHANOĞLU, “Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 157–161, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39237.