Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals

Date

2009-06-01

Author

IŞIK, MEHMET
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

45
views

0
downloads

Thermally stimulated current (TSC) measurements with current flowing perpendicular to the layers were carried out on Tl2Ga2Se3S layered single crystals in the temperature range of 10-260K. The experimental data were analyzed by using different methods, such as curve fitting, initial rise and isothermal decay methods. The analysis revealed that there were three trapping centers with activation energies of 12, 76 and 177 meV. It was concluded that retrapping in these centers was negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. The capture cross section and the concentration of the traps have been also determined. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light illumination temperatures. This experimental technique provided values of 10 and 88 meV/decade for the traps distribution related to two different trapping centers.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/49023

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/j.jpcs.2009.05.021

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally stimulated current observation of trapping centers in an undoped Tl4Ga3InSe8 layered single crystal Hasanlı, Nızamı; Ozkan, H. (Wiley, 2006-11-01) Thermally stimulated current measurements are carried out on as-grown Tl4Ga3InSe8 layered single crystal in the temperature range 10-160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl4Ga3InSe8. They are located at 17 and 27 meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other. It is concluded that in these centers retrapping is negligible, as confirmed by the good agreement between the experim...
Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01) TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-01-01) Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the ele...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-15) Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24)...

Citation Formats

M. IŞIK and N. Hasanlı, “Trapping centers and their distribution in Tl2Ga2Se3S layered single crystals,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 1048–1053, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/49023.