INFLUENCE OF ANISOTROPIC ETCHING ON THE MECHANICAL STRENGTH OF SINGLE-CRYSTAL SILICON-WAFERS

Date

1991-09-16

Author

GASANLI, SM
Hasanlı, Nızamı
STRELTSOV, AK

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The influence is investigated of silicon wafer treatment in the alkali etchant with surface orientation close to planes (111), (100), and (110) on the magnitude of mechanical strength, It is shown that the dependence of the mechanical strength of silicon wafers on the etch time in the alkali etchant irrespective of orientation planes has a complex characteristics, namely: with the increase of etch time the mechanical strength increases, reaches its maximum value and with the further etch time growth it decreases and acquires values less than the ultimate strength. The analysis of the experimental results shows a close connection between the mechanical strength changes and the microstructure of the distorted layer of the silicon wafer surface.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39929

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.2211270113

Collections

Department of Physics, Article

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Citation Formats

S. GASANLI, N. Hasanlı, and A. STRELTSOV, “INFLUENCE OF ANISOTROPIC ETCHING ON THE MECHANICAL STRENGTH OF SINGLE-CRYSTAL SILICON-WAFERS,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 127–131, 1991, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39929.