Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy

Date

2007-05-01

Author

Altan, Hakan
Pham, D.
Grebel, H.
Federici, J. F.

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The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3N4 deposition above the oxide layer which in turn was on a heavily doped p+ layer on p-type silicon. The samples exhibited similar linear transmission in the THz frequency range studied. However, when using an Ar+-ion laser as an optical pump source, differential measurements (with and without the pump source) showed that the transmission was far smaller for the high-kappa dielectric HfO2 films than its conventional dielectric SiO2 counterparts, indicating the presence of large photo-generated carrier density in the p-type substrate.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40897

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/22/5/001

Collections

Department of Physics, Article

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Citation Formats

H. Altan, D. Pham, H. Grebel, and J. F. Federici, “Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 457–463, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40897.