Optoelectronic properties of Ga(4)Se(3)S-layered single crystals

Date

2008-07-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı
Ilaiwi, K. F.

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The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1).

Subject Keywords

Mathematical Physics, Atomic and Molecular Physics, and Optics, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39996

Journal

PHYSICA SCRIPTA

DOI

https://doi.org/10.1088/0031-8949/78/01/015701

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI, N. Hasanlı, and K. F. Ilaiwi, “Optoelectronic properties of Ga(4)Se(3)S-layered single crystals,” PHYSICA SCRIPTA, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39996.