Optoelectronic properties of Tl3InSe4 single crystals

Hasanlı, Nızamı
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283 K. They are observed to have Schottky diode properties in an Ag/Tl3InSe4/Ag Schottky barrier device structure. The absorption spectra displays two maxima, one related to an indirect energy band gap of 1.20 eV and another corresponding to exciton transitions. The photocurrent is observed to be strongly affected by the conductivity type of the crystal. The incident light intensity dependence of the photocurrent is found to be supralinear, linear and sublinear, indicating strong recombination at the surface, monomolecular recombination and bimolecular recombination, respectively, in the regions where the sample is p-type ([image omitted]), at [image omitted], and in the n-type region ([image omitted]). In the n-type region, the photocurrent increases with decreasing temperature down to 250 K, below which the photocurrent is temperature invariant. The change in recombination mechanism is attributed to the change in the behaviour of sensitising and recombination centres.


Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01)
Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Numerical evidence of spontaneous division of dissipative solitons in a planar gas discharge-semiconductor system
Rafatov, İsmail (AIP Publishing, 2019-09-01)
This work deals with the formation of patterns of spatially localized solitary objects in a planar semiconductor gas-discharge system with a high Ohmic electrode. These objects, known as dissipative solitons, are generated in this system in the form of self-organized current filaments, which develop from the homogeneous stationary state by the Turing bifurcation. The numerical model reveals, for the first time, evidence of spontaneous division of the current filaments in this system, similar to that observe...
Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals
Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-04-18)
Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was obs...
Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2008-01-01)
The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of...
Optoelectronic properties of Ga(4)Se(3)S-layered single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı; Ilaiwi, K. F. (IOP Publishing, 2008-07-01)
The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range ...
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Optoelectronic properties of Tl3InSe4 single crystals,” PHILOSOPHICAL MAGAZINE, pp. 3845–3854, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48813.