Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements

Date

2007-01-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

197
views

0
downloads

Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the conduction band. The photocurrent increases with increasing illumination intensity. The recombination mechanism in the crystal changes as temperature decreases due to the effect of exponential trapping centres. Two trapping and/or recombination centres located at 89 and 27 meV were determined from the temperature dependence of the photocurrent, which decreased or increased with increasing temperature in the regions above or below 180 K, respectively.

Subject Keywords

Condensed Matter Physics

URI

https://hdl.handle.net/11511/47065

Journal

PHILOSOPHICAL MAGAZINE

DOI

https://doi.org/10.1080/14786430701716979

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Defect luminescence in undoped p-type GaSe Aydinli, A; Hasanlı, Nızamı; Goksen, K (Informa UK Limited, 2001-12-01) Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T=10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Optoelectronic properties of Tl3InSe4 single crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2010-01-01) The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283...
Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01) TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2008-01-01) The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of...

Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements,” PHILOSOPHICAL MAGAZINE, pp. 5741–5747, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47065.