A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

Date

2005-04-01

Author

Chae, J
Külah, Haluk
Najafi, K

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A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-mu m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (< 1.5 mu m) formed by a sacrificial oxide layer. The fabricated accelerometer is 7 x 9 mm(2) in size, has 160 Hz bandwidth, > similar to 5 pF/g measured sensitivity and calculated sub-mu g/root Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 mu g/root Hz (> 1.5 kHz) and 1.08 mu g/root Hz (> 600 Hz) for in-plane and out-of-plane devices, respectively.

Subject Keywords

Mechanical Engineering, Electrical and Electronic Engineering

URI

https://hdl.handle.net/11511/40354

Journal

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

DOI

https://doi.org/10.1109/jmems.2004.839347

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

J. Chae, H. Külah, and K. Najafi, “A monolithic three-axis micro-g micromachined silicon capacitive accelerometer,” JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, pp. 235–242, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40354.