A monolithic three axis silicon capacitive accelerometer with micro g resolution

Date

2003-06-12

Author

Junseok, Chae
Najefi, Khalil
Külah, Haluk

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

132
views

0
downloads

A monolithic three-axis silicon capacitive accelerometer utilizing a combined surface and bulk micromachining technology is demonstrated with micro-g resolution. The accelerometer consists of three individual single-axis accelerometers. All three devices have full-wafer thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a sacrificial oxide layer. The fabricated accelerometer system is 7/spl times/9 mm/sup 2/ in size, has >5pF/g measured sensitivity and sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the accelerometer hybrid assembled with CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz, 1.08 /spl mu/g//spl radic/Hz for in-plane and out-of-plane devices, respectively.

URI

https://hdl.handle.net/11511/68885

DOI

https://doi.org/10.1109/sensor.2003.1215258

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

A monolithic three-axis micro-g micromachined silicon capacitive accelerometer Chae, J; Külah, Haluk; Najafi, K (Institute of Electrical and Electronics Engineers (IEEE), 2005-04-01) A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-mu m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (< 1.5 mu m) formed by a sacrificial oxide layer. The fabricated accele...
A three axis capacitive MEMS accelerometer on a single substrate Aydemir, Akın; Akın, Tayfun (EPO, 2017) The invention relates to a three axis capacitive mems accelerometer on a single substrate. In this invention a varying gap differential capacitive sensing three-axis accelerometer using SOI on glass process is introduced. The out of plane axis accelerometer which is developed in the present invention can be used for fabrication of either a three axis accelerometer with a single proof mass or an individual single axis accelerometers on the same substrate. Additionally the out of plane axis accelerometer whic...
A Capacitive MEMS Accelerometer Readout with Concurrent Detection and Feedback Using Discrete Components Terzioglu, Yunus; Alper, Said Emre; Azgın, Kıvanç; Akın, Tayfun (2014-05-08) This paper presents an analog readout method for capacitive MEMS accelerometers in which the feedback actuation and capacitive detection are achieved simultaneously on the same electrode set. The presented circuit operates in closed-loop for improved linearity, and it is constructed in a hybrid platform package in which off-the-shelf discrete components are used together with the silicon-on-glass micro-accelerometer. The system is developed as a practical solution to reduce the complexity of the readout cir...
A Single-Layer Dielectric Metasurface Enabling Wave Incidence Direction Control Ansari, Muhammad Afnan; Mehmood, Muhammad Qasim; Kim, Inki; Waseem, Muhammad Hamza; Tauqeer, Tauseef; Yerci, Selçuk; Rho, Junsuk (2019-09-20) Multi-layer three-dimensional (3D) metamaterials have emerged as a platform to realize multifunctional chiral devices such as for asymmetric transmission. However, the alignment and fabrication methods of 3D chiral metamaterials are quite complex and time-consuming, which deteriorate the pragmatic use of such devices. Here, a unique type of direction-controlled single-layer metasurface hologram consisting of low loss hydrogenated amorphous silicon meta-atoms is proposed. The hologram behaves like a chiral m...
A simple out of plane capacitive MEMS accelerometer utilizing lateral and vertical electrodes for differential sensing Terzioglu, Yunus; Kose, Talha; Azgın, Kıvanç; Akın, Tayfun (2015-11-01) This paper presents an out-of-plane (z-axis) accelerometer, which incorporates the use of two different MEMS capacitive electrode structures in combination for implementing a linear closed-loop system. During the implementation, the complexity of the design and fabrication steps of the sensing element is kept at a minimum. The proposed accelerometer uses capacitive MEMS sensing element fabricated with a 4-mask process. This sensing element includes a comb finger type lateral electrode and a vertical paralle...

Citation Formats

C. Junseok, K. Najefi, and H. Külah, “A monolithic three axis silicon capacitive accelerometer with micro g resolution,” 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/68885.